Toggle navigation
Otsi
Publikatsioonid
Profiilid
Registrid
Abi ja info
Switch to English
Intranet
Publikatsioonid
Profiilid
Registrid
Abi ja info
English
Intranet
Andmebaasid
Publikatsioonid
Otsing
Valitud kirjed
0
Schottky diodes (võtmesõna)
Kõikidelt väljadelt
Autori otsing
Märksõna otsing
Pealkirja otsing
algab
sisaldab
täpne vaste
Kõikidelt väljadelt
Autori otsing
Märksõna otsing
Pealkirja otsing
algab
sisaldab
täpne vaste
—
Kõikidelt väljadelt
Autori otsing
Märksõna otsing
Pealkirja otsing
algab
sisaldab
täpne vaste
—
Kõikidelt väljadelt
Autori otsing
Märksõna otsing
Pealkirja otsing
algab
sisaldab
täpne vaste
—
Kõikidelt väljadelt
Autori otsing
Märksõna otsing
Pealkirja otsing
algab
sisaldab
täpne vaste
—
Lisa tingimus
Liitotsing
Tühista
teaviku laadid
raamat
artikkel ajakirjas
artikkel ajalehes
artikkel kogumikus
dissertatsioon
Open Access
Teaduspublikatsioon
aasta
Kirjeid leitud
6
Vaata veel..
(3/75)
Ekspordi
ekspordi kõik päringu tulemused
(6)
Salvesta TXT fail
Salvesta PDF fail
prindi
Märgitud kirjetega toimetamiseks ava
valitud kirjed
kuva
Bibliokirje
Lühikirje
reasta
autor kasvavalt
autor kahanevalt
ilmumisaasta kasvavalt
ilmumisaasta kahanevalt
pealkiri kasvavalt
pealkiri kahanevalt
1
artikkel kogumikus
Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons
Lebedev, Alexander A.
;
Davydovskaja, K. S.
;
Kozlovski, Vitali V.
;
Korolkov, Oleg
;
Sleptšuk, Natalja
;
Toompuu, Jana
11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]
2016
/
p. 49
artikkel kogumikus
2
artikkel kogumikus
Numerical analysis of the influence of deep energy level traps in SiC Schottky structures
Koel, Ants
;
Rang, Toomas
;
Rang, Galina
High performance structure and materials. VI
2012
/
p. 439-448 : ill
artikkel kogumikus
3
artikkel kogumikus
SIC schottky diode rectifier bridge represented as the diffusion-welded stack
Korolkov, Oleg
;
Land, Raul
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Rang, Toomas
11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]
2016
/
p. 42
artikkel kogumikus
4
artikkel kogumikus
SIC schottky diode rectifier bridge represented as the diffusion-welded stack
Korolkov, Oleg
;
Kozlovski, Vitali V.
;
Lebedev, Alexander A.
;
Land, Raul
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Rang, Toomas
Silicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
2017
/
p. 697-700 : ill
https://doi.org/10.4028/www.scientific.net/MSF.897.697
artikkel kogumikus
5
artikkel kogumikus
Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe
Mizsei, Janos
;
Korolkov, Oleg
;
Toompuu, Jana
;
Mikli, Valdek
;
Rang, Toomas
Silicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation
2013
/
p. 677-680 : ill
artikkel kogumikus
6
artikkel kogumikus
The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodes
Veher, Oleksandr
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Korolkov, Oleg
;
Rang, Toomas
Materials and contact characterisation VIII
2017
/
p. 15-22 : ill
http://dx.doi.org/10.2495/MC170021
artikkel kogumikus
Kirjeid leitud 6, kuvan
1 - 6
pealkiri
62
1.
Clamp mode package diffusion welded power SiC Schottky diodes
2.
Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodes
3.
Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons
4.
Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons
5.
High voltage diffusion‐welded stacks on the basis of SiC Schottky diodes
6.
High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodes
7.
Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe
8.
The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodes
9.
Analysis of barrier inhomogeneities of P-type Al/4H-SiC schottky barrier diodes
10.
Numerical simulation of P-type Al/4H-SiC schottky barrier diodes [Online resource]
11.
Investigation of barrier inhomogeneities and electronic transport on Al-Foil/p-Type-4H-SiCSchottky barrier Diodes using diffusion welding
12.
Computer aided simulation of power Scottky Diodes
13.
DLTS measurements on 4H-SiC JBS-diodes with boron implanted local p-n junctions
14.
Electro-thermal simulations and forward surge current failure prediction for SiC diodes
15.
Experimental analysis of the dynamic performance of Si, GaAs and SiC diodes
16.
High performance GaAs power diodes
17.
High quality LPE GaAs power diodes with DLTS method
18.
Investigation of charge carrier lifetime temperature-dependence in 4H-SiC diodes
19.
Investigation of deep level centers in i- and n-layers of GaAs pin-diodes
20.
Leakage currents in 4H-SiC JBS diodes
21.
Measurement of charge carrier lifetime temperature-dependence in 4H-SiC power diodes
22.
Measurements of charge carrier lifetime temperature dependence in 4H-SiC power diodes
23.
Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodes
24.
Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodes
25.
Numerical simulations for reverse recovery process investigations of LPE GaAs power diodes
26.
SiC-diodes forward surge current failure mechanisms : experiment and simulation
27.
The experimental results of reverse recovery effects in power fastrecovery diodes analyzed by numerical model
28.
Analysis of peak current for current crowding effect in 4H- and 6H-SiC Schottky structures
29.
Charge carrier transport in SiC Schottky interfaces : shape factor approach
30.
Comparison of Schottky parameters for diffusion-welded and sputter contacts to silicon carbide
31.
Comparison of the dynamic behaviour of complementary 6H- and 4H-SiC Schottky structures using numerical simulation
32.
Current suppressing effect in alloy metal and 6H-SiC substrate Schottky contacts
33.
Diffusion welding techniques for power SiC Schottky packaging
34.
Hot spots caused by contact inhomogeneities in 4H- and 6H-SiC Schottky structures
35.
Interpretation of some physical parameters of SiC Schottky interfaces manufactured by diffusion welding technology
36.
Large area 4H-SiC power Schottky diode
37.
Large area 6H-SiC Schottky diode
38.
Modelling of inhomogeneities of SiC Schottky interfaces
39.
Numerical analysis of the influence of deep energy level traps in SiC Schottky structures
40.
Numerical two-carrier simulation of the M-S (Schottky) structures
41.
One-dimensional numerical simulation of complementary power Schottky structures
42.
Parametric simulation of SiC Schottky JBC structures
43.
Preliminary approach to the timing measurements for reverse recovery applied to the SiC Schottky diode model
44.
Self-heating phenomenon and current suppressing effect at 6H-SiC Schottky interfaces
45.
Self-heating phenomenon and current suppressing effect at the SiC Schottky interfaces
46.
SiC Schottky diode for power converters
47.
SiC Schottky diode for use in power convertors
48.
SIC schottky diode rectifier bridge represented as the diffusion-welded stack
49.
Temperature influence on current suppressing effect in SiC Schottky diode
50.
The basic parameters of diffusion welded Al Schottky contacts to p- and n-SiC
51.
The basic Schottky parameters for combined diffusion welded and sputter metal contacts
52.
The Schottky parameter test for combined diffusion welded and sputter large area contacts
53.
The self-heating phenomenon in Schottky diode
54.
Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrate
55.
Ambient temperature influence on current suppressing effect caused by self-heating phenomenon at 6H-SiC Schottky interfaces
56.
Analysis of the basic Schottky parameters for diffusion-welded aluminium contacts to p- and n-type SiC
57.
Effects of the inclusion of armchair graphene nanoribbons on the electrical conduction properties of NN-heterojunction 4H-6H/SiC diodes
58.
Progress in development of the resonant tunneling diodes as promising compact sources at the THz gap bottom
59.
Research and development of electronic ballasts for smart lighting systems with light emitting diodes = Tarkades valgustussüsteemides kasutatavate LED-valgustite elektrooniliste ballastseadmete uurimine ja arendamine
60.
Simulation of deep energy traps to explain the VAC temperature dependence anomaly of diffusion welded Schottky contacts
61.
Temperature effects in alloy metal and 6H-SiC substrate Schottky contacts caused by the current suppressing effect
62.
Two-dimensional nonisothermal analysis of the current crowding effect at nonuniform SiC Schottky contacts using device simulator DYNAMIT-2DT
võtmesõna
12
1.
Schottky diodes
2.
SiC Schottky diodes
3.
diodes
4.
JBS diodes
5.
low voltage stresses on switches and diodes
6.
pin-diodes
7.
power diodes
8.
semiconductor diodes
9.
SiC JBS diodes
10.
silicon carbide JBS diodes
11.
Mott–Schottky plot
12.
schottky barrier diode
märksõna
1
1.
Schottky barjäär