Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
autor
vastutusandmed
D.Kropman, E.Mellikov, A.Öpik, K.Lott, O.Volobujeva, T.Kärner, I.Heinmaa, T.Laas, A.Medvid
allikas
Radiation Interaction with Materials and its use in Technologies : Kaunas, 24-27.09.2008
ilmumiskoht
Kaunas
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 204-207
keel
inglise
Kropman, D., Mellikov, E., Öpik, A., Lott, K., Volobujeva, O., Kärner, T., Heinmaa, I., Laas, T., Medvid, A. Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties // Radiation Interaction with Materials and its use in Technologies : Kaunas, 24-27.09.2008. Kaunas : Technologija, 2008. p. 204-207.