Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties
autor
vastutusandmed
D.Kropman, U.Arbu, T.Kärner, Ü.Ugaste, E.Mellikov, M.Kauk, I.Heinmaa, A.Samoson, A.Medvid
allikas
Gettering and defect engineering in semiconductor technology. XI
ilmumiskoht
[S.l.]
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 333-338 : ill
märksõna
ISBN
3-908451-13-2
märkused
Bibliogr.: 8 ref. (Solid state phenomena, ISSN 1012-0394 ; 108/109)
keel
inglise
Kropman, D., Arbu, U., Kärner, T., Ugaste, Ü., Mellikov, E., Kauk, M., Heinmaa, I., Samoson, A., Medvid, A. Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties // Gettering and defect engineering in semiconductor technology. XI. [S.l.] : Elsevier, 2005. p. 333-338 : ill.