Dependence of the carrier removal rate in 4H-SIC PN structures on irradiation temperature
autor
Davydovskaya, Klavdya S.
vastutusandmed
Alexander A. Lebedev, Klavdya S. Davydovskaya, Vitali V. Kozlovski, Oleg Korolkov, Natalja Sleptsuk, Jana Toompuu
ilmumiskoht
Zurich
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 730-733
seeria-sari
konverentsi nimetus, aeg
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) 2-6 September 2018
konverentsi toimumispaik
Birmingham, UK
ISSN
0255-5476
ISBN
978-303571332-9
märkused
Bibliogr.: 7 ref
teaduspublikatsioon
teaduspublikatsioon
TTÜ struktuuriüksus
keel
inglise
Lebedev, A.A., Davydovskaya, K.S., Kozlovski, V.V., Korolkov, O., Sleptsuk, N., Toompuu, J. Dependence of the carrier removal rate in 4H-SIC PN structures on irradiation temperature // Silicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK. Zurich : Trans Tech Publications, 2019. p. 730-733. (Materials science forum ; 963).