Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
autor
vastutusandmed
D.Kropman, E.Mellikov, A.Öpik, K.Lott, O.Volobujeva, T.Kärner, I.Heinmaa, T.Laas and A.Medvid
allikas
ajakirja aastakäik number kuu
404
ilmumisaasta
leheküljed
23/24, p. 5153-5155 : ill
leitav
Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
ISSN
0921-4526
märkused
Bibliogr.: 5 ref
keel
inglise
Kropman, D., Mellikov, E., Öpik, A., Lott, K., Volobujeva, O., Kärner, T., Heinmaa, I., Laas, T., Medvid, A. Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties // Physica B : condensed matter (2009) 404, 23/24, p. 5153-5155 : ill.