A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC
author
statement of authorship
Enn Velmre and Andres Udal
source
publisher
year of publication
pages
p. 725-728
ISSN
1662-9752
notes
Ilmunud ka: Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1
language
inglise
subject term
TalTech department
Velmre, E., Udal, A. A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC // Materials science forum (2000), p. 725-728.