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Analysis of barrier inhomogeneities of P-type Al/4H-SiC schottky barrier diodesZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Toompuu, JanaSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 20192020 / p. 960-972https://doi.org/10.4028/www.scientific.net/MSF.1004.960

artikkel kogumikus

2

Characterization of Interfaces Between the Metal Film and Silicon Carbide Semiconductor = Metallkontakti ja ränikarbiidi vahelise liidespinna karakteriseerimineZiko, Mehadi Hasan2021https://digikogu.taltech.ee/et/Item/34be534c-63e8-4013-b271-eaf1a7cb22e7 https://www.ester.ee/record=b5471196*est

dissertatsioon

3

Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodesSleptšuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 39-42 : illhttp://www.ester.ee/record=b2150914*est

artikkel kogumikus

4

Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electronsLebedev, Alexander A.; Davidovskaja, Klavdia; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, JanaSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 447-450 : illhttps://doi.org/10.4028/www.scientific.net/MSF.897.447

artikkel kogumikus

5

Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electronsLebedev, Alexander A.; Davydovskaja, K. S.; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 49

artikkel kogumikus

6

Formation of Diffusion welded Al contacts to semiconductor silicon carbideKorolkov, Oleg2004

dissertatsioon

7

High voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Rang, Toomas; Sleptšuk, Natalja; Annus, Paul; Land, RaulICSRM 2015 : program guide2015 / p. 73

artikkel kogumikus

8

High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasSilicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy2016 / p. 790-794 : illhttp://dx.doi.org/10.4028/www.scientific.net/MSF.858.790

artikkel kogumikus

9

Investigation of barrier inhomogeneities and electronic transport on Al-Foil/p-Type-4H-SiCSchottky barrier Diodes using diffusion weldingZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Rashid, Muhammad HaroonCrystals2020 / p. 636-647https://doi.org/10.3390/cryst10080636

artikkel ajakirjas

10

Investigation of deep level centers in i- and n-layers of GaAs pin-diodesToompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Rang, ToomasBEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia2014 / p. 25-28 : ill

artikkel kogumikus

11

Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005https://www.ester.ee/record=b2053292*est

dissertatsioon

12

Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011https://www.ester.ee/record=b2692547*est

dissertatsioon

13

Numerical analysis of the influence of deep energy level traps in SiC Schottky structuresKoel, Ants; Rang, Toomas; Rang, GalinaHigh performance structure and materials. VI2012 / p. 439-448 : ill

artikkel kogumikus

14

Numerical simulation of P-type Al/4H-SiC schottky barrier diodes [Online resource]Ziko, Mehadi Hasan; Koel, Ants; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: illhttps://doi.org/10.1109/BEC.2018.8600976

artikkel kogumikus

15

SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Toompuu, Jana; Sleptšuk, Natalja; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 862–865 : illhttps://doi.org/10.4028/www.scientific.net/MSF.924.862

artikkel kogumikus

16

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, Toomas11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 42

artikkel kogumikus

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SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : illhttps://doi.org/10.4028/www.scientific.net/MSF.897.697

artikkel kogumikus

18

Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probeMizsei, Janos; Korolkov, Oleg; Toompuu, Jana; Rang, ToomasThe 9th European Conference on Silicon Carbide and Related Materials : abstract book : St. Petersburg Russia, 2-6 September, 20122012 / 2 p. : ill

artikkel kogumikus

19

Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probeMizsei, Janos; Korolkov, Oleg; Toompuu, Jana; Mikli, Valdek; Rang, ToomasSilicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation2013 / p. 677-680 : ill

artikkel kogumikus

20

The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodesVeher, Oleksandr; Sleptšuk, Natalja; Toompuu, Jana; Korolkov, Oleg; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 15-22 : illhttp://dx.doi.org/10.2495/MC170021

artikkel kogumikus

Schottky barjäär (märksõna)

teaviku laadid

pealkiri 42

võtmesõna 4

märksõna 1