Analysis of barrier inhomogeneities of P-type Al/4H-SiC Schottky barrier diodes
vastutusandmed
Mehadi Hasan Ziko, Ants Koel, Toomas Rang, Jana Toompuu
allikas
Silicon Carbide and Related Materials 2019 : Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan
ilmumiskoht
Zürich
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 960-972
seeria-sari
konverentsi nimetus, aeg
18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019
konverentsi toimumispaik
Kyoto, Japan
ISSN
1662-9752
ISBN
9783035715798
märkused
Bibliogr.: 44 ref
teaduspublikatsioon
teaduspublikatsioon
TTÜ struktuuriüksus
keel
inglise
võtmesõna
Ziko, M.H., Koel, A., Rang, T., Toompuu, J. Analysis of barrier inhomogeneities of P-type Al/4H-SiC Schottky barrier diodes // Silicon Carbide and Related Materials 2019 : Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan, Materials science forum. Zürich : Trans Tech Publications, 2020. p. 960-972. (Materials science forum ; 1004).