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Cell-level power supply for high-voltage modular multilevel converters [Electronic resource]Blinov, Andrei; Norrga, Staffan; Tibola, Gabriel; Velotto, Giovanni19th European Conference on Power Electronics and Application : EPE'17 ECCE Europe : September 11-14, 2017, Warsaw, Poland2017 / p. P1-P10 : ill. [USB] https://doi.org/10.23919/EPE17ECCEEurope.2017.8099361

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Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction [Electronic resource]Rabkowski, Jacek; Platek, TadeuszEPE'15 ECCE Europe : 8-10 September 2015, Geneva, Switzerland : 17th European Conference on Power Electronics and Applications2015 / [10] p. : ill. [USB] http://dx.doi.org/10.1109/EPE.2015.7309444

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Exploring different synthesis parameters for the preparation of metal-nitrogen-carbon type oxygen reduction catalystsTeppor, Patrick; Jäger, Rutha; Härk, Eneli; Sepp, Silver; Kook, Mati; Volobujeva, Olga; Paiste, Päärn; Kochovski, Zdravko; Tallo, Indre; Lust, EnnJournal of the Electrochemical Society2020 / art. 054513 https://doi.org/10.1149/1945-7111/ab7093 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

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Feasibility study of Si and SiC MOSFETs in high-gain DC/DC converter for renewable energy applicationsBlinov, Andrei; Chub, Andrii; Vinnikov, Dmitri; Rang, ToomasProceedings : IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society : Austria Center Vienna, Vienna, Austria, 10-14 November, 20132013 / p. 5975-5978 : ill

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Gate and base drivers for silicon carbide power transistors : an overviewPeftitsis, Dimosthenis; Rabkowski, JacekIEEE transactions on power electronics2016 / p. 7194-7213 : ill http://dx.doi.org/10.1109/TPEL.2015.2510425

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Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide schottky diodesKozlovski, Vitali V.; Korolkov, Oleg; Davydovskaya, Klavdia S.; Lebedev, Alexander A.; Levinshteǐn, Michael E.; Sleptšuk, Natalja; Strel'Chuk, Anatolii M.; Toompuu, JanaTechnical Physics Letter2020 / p. 287 - 289 https://doi.org/10.1134/S1063785020030244 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

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Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-well light emitting diode using diffusion bonding techniqueRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasMicromachines2021 / art. 1499 https://doi.org/10.3390/mi12121499 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

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Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbideRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Gähwiler, Reto; Grosberg, Martin; Jõemaa, RaunoMaterials and contact characterisation VIII2017 / p. 235-248 : ill http://dx.doi.org/10.2495/MC170241

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Numerical analysis of the influence of deep energy level traps in SiC Schottky structuresKoel, Ants; Rang, Toomas; Rang, GalinaHigh performance structure and materials. VI2012 / p. 439-448 : ill

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Numerical simulation of P-type Al/4H-SiC Schottky barrier diodes [Online resource]Ziko, Mehadi Hasan; Koel, Ants; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600976

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On the design process of a 6-kVA quasi-Z-inverter employing SiC power devicesZdanowski, Mariusz; Peftitsis, Dimosthenis; Piasecki, Szymon; Rabkowski, JacekIEEE transactions on power electronics2016 / p. 7499-7508 : ill https://doi.org/10.1109/TPEL.2016.2527100

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Polytypic heterojunctions for wide bandgap semiconductor materialsShenkin, Mikhail; Korolkov, Oleg; Rang, Toomas; Rang, GalinaMaterials characterization VII2015 / p. 273-282 : ill

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ZrC-TiC-MoSi2 ceramic composite by spark plasma sinteringHussainova, Irina; Minasyan, Tatevik; Liu, Le; Aydinyan, SofiyaJournal of Physics: Conference Series2020 / art. 012028 https://doi.org/10.1088/1742-6596/1527/1/012028 Conference Proceedings at Scopus Article at Scopus Article at WOS

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The measurement and tuning of SiC diode voltage doubler represented as diffusion-welded stack [Online resource]Toompuu, Jana; Sleptšuk, Natalja; Land, Raul; Korolkov, Oleg; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600963

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The specificity of solid-phase interaction of aluminium with silicon carbide in the manufacture of diffusion-welded contacts to semiconductor devicesSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas; Mikli, ValdekElektronika ir elektrotechnika = Electronics and electrical engineering2012 / p. 45-48 : ill https://eejournal.ktu.lt/index.php/elt/article/view/2610

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silicon carbide (keyword)

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