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Rang, Toomas 1951 CV

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201

book article

Pöördumine Haridus- ja Teadusministri ning Riigikogu kultuurikomisjoni esimehe poole : [doktorikoolide probleemist]Arro, Ilmar; Kaljurand, Mihkel; Kallavus, Urve; Kübarsepp, Jakob; Lille, Ülo; Lopp, Margus; Mellikov, Enn; Min, Mart; Rang, Toomas; Rüstern, Ennu; Taklaja, Andres; Tamm, Toomas; Tammet, Tanel; Tepandi, Jaak; Ubar, Raimund-Johannes; Öpik, AndresTallinna Tehnikaülikooli aastaraamat 20052006 / lk. 430-431

book article
202

book article

Rahvusvaheline Seebecki foorum Tallinnas : [20.-24. mail 2013]Rang, ToomasTallinna Tehnikaülikooli aastaraamat 20132014 / lk. 303-304

book article
203

journal article

Relative complex permittivity and its dependence on frequencyGiannoukos, Georgios; Min, Mart; Rang, ToomasWorld journal of engineering2017 / p. 532-537 : ill https://doi.org/10.1108/WJE-01-2017-0007

journal article
204

book article

Ränikarbiidil põhinevate jõupooljuhtseadiste disain ja karakteriseerimineRang, Toomas; Rang, GalinaTeadusmõte Eestis. 4, Tehnikateadused. 22007 / lk. 121-131 : ill

book article
205

book article

Self-heating phenomenon and current suppressing effect at 6H-SiC Schottky interfacesKurel, Raido; Rang, ToomasProceedings of the 5th NEXUSPAN Workshop on Thermal Aspects in Microsystem Technology, 6-8 May 1998, Budapest, Hungary1998 / p. 88-91

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206

book article

Self-heating phenomenon and current suppressing effect at the SiC Schottky interfacesRang, Toomas; Kurel, RaidoSoftware for electrical engineering analysis and design. IV1999 / p. 153-162: ill

book article
207

book article

Semiconductor based alcohol sensing elementRang, Toomas; Kasemaa, ArgoProceedings of the 6th Nexuspan Workshop Microsystems Technology Activities in Baltic Region : 23-24 April, 1999, Vilnius, Lithuania1999 / p. 82-84

book article
208

book article EST / book article ENG

SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Toompuu, Jana; Sleptšuk, Natalja; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 862–865 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.862 Conference Proceedings at Scopus Article at Scopus

book article EST / book article ENG
209

book article

SiC Schottky diode for power convertersPikkov, Mihhail; Rang, ToomasPEDC 2001 : Power Electronics Devices Compatibility : 2nd conference : 3-5 September 2001, Zielona Gora, Poland2001 / p. 156-161 : ill

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210

book article

SiC Schottky diode for use in power convertorsPikkov, Mihhail; Rang, Toomas; Pokatilov, AndreiBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 245-246 : ill

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211

book article

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697

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212

book article

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, Toomas11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 42

book article
213

journal article

SiC и GaAs диоды в устройствах силовой электроникиBlinov, Andrei; Vinnikov, Dmitri; Rang, ToomasТехнiчна електродинамiка : тематичний випуск : силова електрониiка та енергоефективнiсть2012 / с. 42-46 : ил

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214

book article

Silicon carbide - new challenge for power semiconductor devicesRang, Toomas; Rang, Galina2nd International Symposium "Topical Problems of Education in the Field of Electrical and Power Engineering" : Kuressaare, Estonia, January 17-22, 20052005 / p. 36-42 : ill

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215

journal article

Silicon integrated circuit fabrication process modeling and simulationRang, Toomas; Tarnay, K.; Mizsei, JanosPeriodica polytechnica. Electrical engineering = Электротехника1980 / p. 109-113 https://www.ester.ee/record=b1198855*est

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216

book article

Silicon planar technology process modelingRang, Toomas; Tarnay, K.; Masszi, F.Test methods in electronics technology : third International Spring Seminar on Electronics Technology, May 15-18, 1979, Balatonfüred, Hungary1979 / p. 110-120

book article
217

journal article

Simple relationship between the breakdown voltage, concentration and junction depth pn diffused junctionsRang, ToomasPhysica status solidi. A, Applied research1982 / p. K117-K119 : tab., joon https://www.ester.ee/record=b1562026*est

journal article
218

book article

Simulation of deep energy traps to explain the VAC temperature dependence anomaly of diffusion welded Schottky contactsKoel, Ants; Rang, Toomas; Rang, GalinaICSCRM2011 : Cleveland Ohio, USA, September 11-16, 2011 : abstracts2011 / p. 340 : ill

book article
219

journal article EST / journal article ENG

Simulations of benzene and hydrogen-sulfide gas detector based on single-walled carbon nanotube over intrinsic 4H-SiC substrateRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Ziko, Mehadi HasanMicromachines2020 / art. 453, 13 p. : ill https://doi.org/10.3390/mi11050453 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

journal article EST / journal article ENG
220

journal article EST / journal article ENG

Simulations of graphene nanoribbon field effect transistor for the detection of propane and butane gases : a first principles studyRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasNanomaterials2020 / art. 98 https://doi.org/10.3390/nano10010098 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

journal article EST / journal article ENG
221

book article EST / book article ENG

Simulations of heterostructures based on 3C-4H and 6H-4H silicon carbide polytypesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 302-305 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.302 Conference Proceedings at Scopus Article at Scopus

book article EST / book article ENG
222

journal article EST / journal article ENG

Simulations of propane and butane gas sensor based on pristine armchair graphene nanoribbonRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasIOP conference series : materials science and engineering2018 / art. 012001, 8 p https://doi.org/10.1088/1757-899X/362/1/012001 Conference proceedings at Scopus Article at Scopus Article at WOS

journal article EST / journal article ENG
223

book article

A smart capless voltage regulator for very high bandwidth A/D and D/A converters in a standard 28nm CMOS processKampus, Vahur; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 43-46 : ill http://www.ester.ee/record=b2150914*est

book article
224

book article

Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbideKorolkov, Oleg; Rang, ToomasSilicon Carbide and Related Materials 2001 : ICSCRM2001 : proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28 - November 2, 2001. Part 22002 / p. 941-944 : ill

book article
225

book article

Some of comparative properties of diffusion welded contacts to 6H- and 4H-silicon carbideKorolkov, Oleg; Rang, ToomasInternational Conference on Silicon Carbide and Related Materials 2001 - ICSCRM2001 - October 28-November 2, 2001 (Epochal Tsukuba, Ibaraki, Japan) : technical digest2001 / p. 625-626 : ill

book article

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