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Schottky barjäär (subject term)
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26
book article
Large area 4H-SiC power Schottky diode
Rang, Toomas
;
Korolkov, Oleg
;
Pikkov, Mihhail
Proceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany
2000
/
p. 890-893
book article
27
journal article
Large area 6H-SiC Schottky diode
Rang, Toomas
;
Korolkov, Oleg
;
Pikkov, Mihhail
Proceedings of the Estonian Academy of Sciences. Engineering
2000
/
2, p. 155-159 : ill
https://artiklid.elnet.ee/record=b1004045*est
journal article
28
book article
Modelling of inhomogeneities of SiC Schottky interfaces
Rang, Toomas
Software for Electrical Engineering Analysis and Design V : [Fifth International Conference ... : Electrosoft V]
2001
/
p. 3-15 : ill
https://www.witpress.com/Secure/elibrary/papers/ES01/ES01000FU.pdf
book article
29
book article
Numerical analysis of the influence of deep energy level traps in SiC Schottky structures
Koel, Ants
;
Rang, Toomas
;
Rang, Galina
High performance structure and materials. VI
2012
/
p. 439-448 : ill
book article
30
book article
Numerical simulation of P-type Al/4H-SiC Schottky barrier diodes [Online resource]
Ziko, Mehadi Hasan
;
Koel, Ants
;
Rang, Toomas
BEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 2018
2018
/
4 p.: ill
https://doi.org/10.1109/BEC.2018.8600976
book article
31
book article
Numerical study of turn-off phenomenon in complementary 4H-SiC JBS rectifiers
Rang, Toomas
;
Kurel, Raido
;
Higelin, G.
BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia
2004
/
p. 47-50 : ill
book article
32
journal article
Numerical two-carrier simulation of the M-S (Schottky) structures
Rang, Toomas
Research report : System Theory Laboratory of Electrical Engineering, University of the Saarland
1985
/
s. 62
journal article
33
journal article
One-dimensional numerical simulation of complementary power Schottky structures
Rang, Toomas
IEE proceedings. Part I Solid-state and electron devices
1985
/
p. 253-256
journal article
34
book article
Parametric simulation of SiC Schottky JBC structures
Rang, Toomas
;
Kurel, Raido
Computer methods and experimental measurements for surface effects and contact mechanics VIII
2007
/
p. 315-334
https://www.witpress.com/Secure/elibrary/papers/SECM07/SECM07030FU1.pdf
book article
35
book article
Preliminary approach to the timing measurements for reverse recovery applied to the SiC Schottky diode model
Pikkov, Mihhail
The 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings
2000
/
p. 321-322 : ill
book article
36
book article EST
/
book article ENG
SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stack
Korolkov, Oleg
;
Land, Raul
;
Toompuu, Jana
;
Sleptšuk, Natalja
;
Rang, Toomas
Silicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA
2018
/
p. 862–865 : ill
https://doi.org/10.4028/www.scientific.net/MSF.924.862
Conference Proceedings at Scopus
Article at Scopus
book article EST
/
book article ENG
37
book article
SiC Schottky diode for power converters
Pikkov, Mihhail
;
Rang, Toomas
PEDC 2001 : Power Electronics Devices Compatibility : 2nd conference : 3-5 September 2001, Zielona Gora, Poland
2001
/
p. 156-161 : ill
book article
38
book article
SiC Schottky diode for use in power convertors
Pikkov, Mihhail
;
Rang, Toomas
;
Pokatilov, Andrei
BEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference
2006
/
p. 245-246 : ill
book article
39
book article
SIC schottky diode rectifier bridge represented as the diffusion-welded stack
Korolkov, Oleg
;
Kozlovski, Vitali V.
;
Lebedev, Alexander A.
;
Land, Raul
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Rang, Toomas
Silicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
2017
/
p. 697-700 : ill
https://doi.org/10.4028/www.scientific.net/MSF.897.697
book article
40
book article
SIC schottky diode rectifier bridge represented as the diffusion-welded stack
Korolkov, Oleg
;
Land, Raul
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Rang, Toomas
11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]
2016
/
p. 42
book article
41
book article
Some of comparative properties of diffusion welded contacts to 6H- and 4H-silicon carbide
Korolkov, Oleg
;
Rang, Toomas
International Conference on Silicon Carbide and Related Materials 2001 - ICSCRM2001 - October 28-November 2, 2001 (Epochal Tsukuba, Ibaraki, Japan) : technical digest
2001
/
p. 625-626 : ill
https://www.researchgate.net/publication/250340293_Some_Comparative_Properties_of_Diffusion-Welded_Contacts_to_6H_and_4H_Silicon_Carbide
book article
42
book article
Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe
Mizsei, Janos
;
Korolkov, Oleg
;
Toompuu, Jana
;
Rang, Toomas
The 9th European Conference on Silicon Carbide and Related Materials : abstract book : St. Petersburg Russia, 2-6 September, 2012
2012
/
2 p. : ill
book article
43
book article
Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe
Mizsei, Janos
;
Korolkov, Oleg
;
Toompuu, Jana
;
Mikli, Valdek
;
Rang, Toomas
Silicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation
2013
/
p. 677-680 : ill
book article
44
book article
The basic parameters of diffusion welded Al Schottky contacts to p- and n-SiC
Korolkov, Oleg
;
Ruut, Jana
;
Kuznetsova, Natalja
;
Rang, Toomas
Silicon Carbide and Related Materials 2003
2004
/
p. 857-860
https://doi.org/10.4028/www.scientific.net/MSF.457-460.857
book article
45
book article
The basic Schottky parameters for combined diffusion welded and sputter metal contacts
Kuznetsova, Natalja
;
Korolkov, Oleg
;
Rang, Toomas
;
Pikkov, Mihhail
BEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference
2006
/
p. 47-50 : ill
book article
46
book article
The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodes
Veher, Oleksandr
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Korolkov, Oleg
;
Rang, Toomas
Materials and contact characterisation VIII
2017
/
p. 15-22 : ill
http://dx.doi.org/10.2495/MC170021
book article
47
book article
The Schottky parameter test for combined diffusion welded and sputter large area contacts
Korolkov, Oleg
;
Kuznetsova, Natalja
;
Rang, Toomas
;
Syrkin, A.
;
Dmitriev, V.
Silicon carbide and related materials
2007
/
p. 737-740
https://www.scientific.net/MSF.556-557.737
book article
48
book article
Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrate
Rang, Toomas
;
Blum, Alfons
Proceedings of the ELECTROSOFT 96, May 28-30, San-Miniato, Italy
1996
/
p. 347-356
book article
49
book article
Two-dimensional nonisothermal analysis of the current crowding effect at nonuniform SiC Schottky contacts using device simulator DYNAMIT-2DT
Kurel, Raido
;
Udal, Andres
BEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia
2002
/
p. 51-54 : ill
book article
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