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High-attenuation tunnel-type detector for calibration of single-photon devicesKübarsepp, Toomas; Pokatilov, Andrei; Vabson, Viktor; Dhoska, KlodianProceedings of NEWRAD 20142014 / p. 115-116 : ill

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27

journal article

High-sensitivity compact moving particles detector with an external-cavity laser diodeMeigas, KaljuTallinna Tehnikaülikooli Toimetised1994 / lk. 82-88: ill

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28

book article

Improved high-power-factor three-phase diode rectifiers using ripple-power re-rectificationSakkos, Tiiu; Sarv, Vello; Järvik, Jaan9th European Conference on Power Electronics and Applications : 27-29 August 2001, Graz, Austria2001 / p. DS3.1-1 : ill

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Improved high-power-factor three-phase diode rectifiers using ripple-power re-rectification [Electronic resource]Sakkos, Tiiu; Sarv, Vello; Järvik, JaanEPE 2001 : 9th European Conference on Power Electronics and Applications : 27-29 August 2001, Graz2001 / [9] p. : ill. [CD-ROM]

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journal article EST / journal article ENG

Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide schottky diodesKozlovski, Vitali V.; Korolkov, Oleg; Davydovskaya, Klavdia S.; Lebedev, Alexander A.; Levinshteǐn, Michael E.; Sleptšuk, Natalja; Strel'Chuk, Anatolii M.; Toompuu, JanaTechnical Physics Letter2020 / p. 287 - 289 https://doi.org/10.1134/S1063785020030244 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

journal article EST / journal article ENG

31

book article

Investigation of charge carrier lifetime temperature-dependence in 4H-SiC diodesVelmre, Enn; Udal, AndresSilicon carbide and related materials 20062007 / p. 375-378 https://www.researchgate.net/publication/250348987_Investigation_of_Charge_Carrier_Lifetime_Temperature-Dependence_in_4H-SiC_Diodes

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32

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Investigation of P-i-n GaAs structures by DLTS method : the deep level transient spectroscopy in application to GaAs p-i-n structures for identification of deep levelsToompuu, Jana2010 https://www.amazon.com/Investigation-p-i-n-GaAs-structures-method/dp/383839223X

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33

book article

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailAbstracts of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 303-304

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34

book article

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 890-893

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35

journal article

Leakage currents in 4H-SiC JBS diodesIvanov, Pavel; Korolkov, Oleg; Sleptšuk, NataljaSemiconductors2012 / p. 397-400 : ill https://link.springer.com/article/10.1134/S106378261203013X

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36

journal article

LPE technology for power GaAs diode structuresVoitovitš, Viktor; Rang, Toomas; Rang, GalinaEstonian journal of engineering2010 / 1, p. 11-22 : ill

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book article

Measurement of charge carrier lifetime temperature-dependence in 4H-SiC power diodesUdal, Andres; Velmre, EnnProceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 12000 / p. 781-784 https://www.scientific.net/MSF.338-342.781

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journal article EST / journal article ENG

An MPPT algorithm for PV systems based on a simplified photo-diode modelRestrepo, Carlos; Gonzalez-Castano, Catalina; Munoz, Javier; Chub, Andrii; Vidal-Idiarte, Enric; Giral, RobertoIEEE Access2021 / p. 33189-33202 https://doi.org/10.1109/ACCESS.2021.3061340 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

journal article EST / journal article ENG

39

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New active diode-switched transformer filters to improve power factor of three-phase diode rectifiers with capacitive smoothingSakkos, Tiiu; Sarv, VelloProceedings of the Estonian Academy of Sciences. Engineering1997 / 3, p. 158-170: ill

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40

book article

A new low-distorting three-phase diode rectifier employing optimum ripple power control [Electronic resource]Sakkos, Tiiu; Sarv, VelloProceedings of 4th International Workshop CPE 2005 : Compatibility in Power Electronics : Fifth International Research and Educational Colloquium on Electronics : 1-3 June 2005, Gdynia, Poland2005 / [6] p. : ill. [CD-ROM] https://www.researchgate.net/publication/4196868_A_new_low-distorting_three-phase_diode_rectifier_employing_optimum_ripple_power_control

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41

book article

Non-destructive eddy current measurments for silicon carbide heterostructure analysisSahakyan, Armen; Koel, Ants; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 49-60 : ill http://dx.doi.org/10.2495/MC170061

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42

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Numerical simulation of a silicon carbide diodeVelmre, Enn; Udal, AndresBEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 559-566: ill https://www.ester.ee/record=b2150914*est

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43

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Numerical simulations for reverse recovery process investigations of LPE GaAs power diodesKoel, Ants; Rang, Toomas; Voitovitš, Viktor; Toompuu, JanaBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 39-42 : ill

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44

book article

Numerical simulations of wideband SiC N-N heterostructure diodePatankar, Udayan Sunil; Koel, Ants; Pardy, TamasLAEDC 2020 : Latin American Electron Devices Conference, San José, Costa Rica, February 25-28, 20202020 / 4 p https://doi.org/10.1109/LAEDC49063.2020.9073489

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45

journal article

A numerical transient analysis of a bulk-barrier diodeUdal, AndresSolid state electronics : an international journal1983 / p. 1130-1131 https://www.ester.ee/record=b1202249*est

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46

book article

Optimization of the alignment position for SPAD-detector calibrationDhoska, Klodian; Hofer, Helmuth; Lopez, Marco; Kübarsepp, Toomas; Kück, StefanDoctoral School of Energy and Geotechnology II : closing conference of the project : Pärnu, Estonia, January 12-17, 20152015 / p. 201-202 : ill

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47

book article

Performance improvement method for the voltage-fed qZSI with continuous input currentVinnikov, Dmitri; Roasto, Indrek; Strzelecki, Ryszard; Adamowicz, MarekMELECON 2010 : the 15th IEEE Mediterranean Electrotechnical Conference : 25th-28th April 2010, Malta : book of abstracts2010 / p. 135 https://ieeexplore.ieee.org/document/5476229

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48

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Power factor correction of three-phase diode rectifiers using optimum ripple-power controlSakkos, Tiiu; Sarv, VelloEPE-PEMC 2004 : 11th International Power Electronics and Motion Control Conference : 2-4 September 2004, Riga, Latvia : proceedings. Vol.5 of 7, Power supply quality, renewables, power systems and DER2004 / p. 5-397 - 5-401 : ill

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49

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Progress in development of the resonant tunneling diodes as promising compact sources at the THz gap bottomUdal, Andres; Jaanus, Martin; Valušis, Gintaras; Kašalynas, Irmantas; Ikonic, Zoran; Indjin, DraganTHz for CBRN and explosives detection and diagnosis2017 / p. 169-178 http://doi.org/10.1007/978-94-024-1093-8_20

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Pulse profile registration using self-mixing in diode laserMeigas, Kalju; Hinrikus, Hiie; Lass, Jaanus; Kattai, RainProceedings of the 20th Annual International Conference of the IEEE Engineering in Medicine and Biology Society. Vol. 20, no. 4, Biomedical Engineering Towards the Year 2000 and Beyond : Hong Kong SAR, China, October 29-November 1, 19981998 / p. 1875-1878 : ill

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