Numerical analysis of the influence of deep energy level traps in SiC Schottky structures

vastutusandmed
A. Koel, T. Rang & G. Rang
allikas
High performance structure and materials. VI
ilmumiskoht
Southampton
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 439-448 : ill
seeria-sari
WIT transactions on the built environment ; 124
võtmesõna
metal semiconductor contacts
interface layer
deep energy levels
DLTS method
ISSN
1743-3509
ISBN
978-1-84564-596-0
märkused
Bibliogr.: 16 ref
keel
inglise
Koel, A., Rang, T., Rang, G. Numerical analysis of the influence of deep energy level traps in SiC Schottky structures // High performance structure and materials. VI. Southampton : WIT Press, 2012. p. 439-448 : ill. (WIT transactions on the built environment ; 124).