Otsing - TalTech teadusportaal

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51

dissertatsioon

Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005 https://www.ester.ee/record=b2053292*est

dissertatsioon

52

artikkel ajakirjas

Investigation of planetary milling for nano-silicon carbide reinforced aluminium metal matrix compositesKollo, Lauri; Leparoux, Marc; Bradbury, Christopher R.; Jäggi, Christian; Carreno-Morelli, Efrain; Rodriguez-Arbaizar, MikelJournal of alloys and compounds2010 / p. 394-400 : ill https://www.sciencedirect.com/science/article/abs/pii/S0925838809018738

artikkel ajakirjas

53

artikkel kogumikus

Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials 20072009 / p. 647-650

artikkel kogumikus

54

artikkel kogumikus

Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials2007 / p. 100 https://www.scientific.net/MSF.600-603.647

artikkel kogumikus

55

dissertatsioon

Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011 https://www.ester.ee/record=b2692547*est

dissertatsioon

56

artikkel kogumikus

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailAbstracts of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 303-304

artikkel kogumikus

57

artikkel kogumikus

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 890-893

artikkel kogumikus

58

artikkel ajakirjas

Large area 6H-SiC Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 155-159 : ill https://artiklid.elnet.ee/record=b1004045*est

artikkel ajakirjas

59

artikkel ajakirjas

Leakage currents in 4H-SiC JBS diodesIvanov, Pavel; Korolkov, Oleg; Sleptšuk, NataljaSemiconductors2012 / p. 397-400 : ill https://link.springer.com/article/10.1134/S106378261203013X

artikkel ajakirjas

60

artikkel ajakirjas EST / artikkel ajakirjas ENG

Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electronsKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSemiconductors2019 / p. 975−978 https://doi.org/10.1134/S1063782619070133 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

artikkel ajakirjas EST / artikkel ajakirjas ENG

61

artikkel ajakirjas EST / artikkel ajakirjas ENG

Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-well light emitting diode using diffusion bonding techniqueRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasMicromachines2021 / art. 1499 https://doi.org/10.3390/mi12121499 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

artikkel ajakirjas EST / artikkel ajakirjas ENG

62

artikkel ajakirjas

Modelling of charge carrier non-isothermal transport in silicon and silicon carbideVelmre, Enn; Udal, AndresProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 144-154 : ill https://artiklid.elnet.ee/record=b1004044*est

artikkel ajakirjas

63

artikkel kogumikus

Modelling of inhomogeneities of SiC Schottky interfacesRang, ToomasSoftware for Electrical Engineering Analysis and Design V : [Fifth International Conference ... : Electrosoft V]2001 / p. 3-15 : ill https://www.witpress.com/Secure/elibrary/papers/ES01/ES01000FU.pdf

artikkel kogumikus

64

artikkel kogumikus EST / artikkel kogumikus ENG

Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019 Materials science forum2020 / p. 490-496 https://doi.org/10.4028/www.scientific.net/MSF.1004.490 Conference proceedings at Scopus Article at Scopus

artikkel kogumikus EST / artikkel kogumikus ENG

65

artikkel kogumikus EST / artikkel kogumikus ENG

Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 357–361 https://doi.org/10.4028/www.scientific.net/MSF.963.357 Conference proceeding at Scopus Article at Scopus

artikkel kogumikus EST / artikkel kogumikus ENG

66

artikkel kogumikus

Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbideRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Gähwiler, Reto; Grosberg, Martin; Jõemaa, RaunoMaterials and contact characterisation VIII2017 / p. 235-248 : ill http://dx.doi.org/10.2495/MC170241

artikkel kogumikus

67

artikkel kogumikus

Non-destructive eddy current measurments for silicon carbide heterostructure analysisSahakyan, Armen; Koel, Ants; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 49-60 : ill http://dx.doi.org/10.2495/MC170061

artikkel kogumikus

68

artikkel kogumikus

Numerical analysis of the influence of deep energy level traps in SiC Schottky structuresKoel, Ants; Rang, Toomas; Rang, GalinaHigh performance structure and materials. VI2012 / p. 439-448 : ill

artikkel kogumikus

69

artikkel kogumikus

Numerical investigation of SiC devices performance considering the incomplecte dopant ionizationVelmre, Enn; Udal, AndresSilicon carbide and related materials 20052006 / p. 1383-1386 https://www.scientific.net/MSF.527-529.1383

artikkel kogumikus

70

artikkel kogumikus

Numerical simulation of a silicon carbide diodeVelmre, Enn; Udal, AndresBEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 559-566: ill https://www.ester.ee/record=b2150914*est

artikkel kogumikus

71

artikkel kogumikus

Numerical simulation of P-type Al/4H-SiC Schottky barrier diodes [Online resource]Ziko, Mehadi Hasan; Koel, Ants; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600976

artikkel kogumikus

72

artikkel kogumikus

Numerical simulations of wideband SiC N-N heterostructure diodePatankar, Udayan Sunil; Koel, Ants; Pardy, TamasLAEDC 2020 : Latin American Electron Devices Conference, San José, Costa Rica, February 25-28, 20202020 / 4 p https://doi.org/10.1109/LAEDC49063.2020.9073489

artikkel kogumikus

73

artikkel kogumikus

Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiersRang, Toomas; Higelin, G.; Kurel, RaidoSilicon Carbide and Related Materials 20032004 / p. 1045-1048 https://www.scientific.net/MSF.457-460.1045

artikkel kogumikus

74

artikkel ajakirjas

Oxidation-abrasion of TiC-based cermets in SiC mediumAntonov, Maksim; Hussainova, Irina; Kübarsepp, Jakob; Traksmaa, RainerWear2011 / p. 23-31 : ill

artikkel ajakirjas

75

artikkel kogumikus

Parametric simulation of SiC Schottky JBC structuresRang, Toomas; Kurel, RaidoComputer methods and experimental measurements for surface effects and contact mechanics VIII2007 / p. 315-334 https://www.witpress.com/Secure/elibrary/papers/SECM07/SECM07030FU1.pdf

artikkel kogumikus

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