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1
artikkel kogumikus
Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons
Lebedev, Alexander A.
;
Davydovskaja, K. S.
;
Kozlovski, Vitali V.
;
Korolkov, Oleg
;
Sleptšuk, Natalja
;
Toompuu, Jana
11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]
2016
/
p. 49
artikkel kogumikus
2
artikkel kogumikus
Grid-frequency Vienna rectifier and isolated current-source DC-DC converters for efficient off-board charging of electric vehicles
Rabkowski, Jacek
;
Blinov, Andrei
;
Zinchenko, Denys
;
Wrona, Grzegorz
;
Zdanowski, Mariusz
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Lyon, France, 7-11 Sept. 2020
2020
/
10 p. : ill
https://doi.org/10.23919/EPE20ECCEEurope43536.2020.9215772
artikkel kogumikus
3
artikkel ajakirjas
High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules
Colmenares, Juan
;
Peftitsis, Dimosthenis
;
Rabkowski, Jacek
IEEE transactions on industry applications
2015
/
p. 4664-4676 : ill
http://dx.doi.org/10.1109/TIA.2015.2456422
artikkel ajakirjas
4
artikkel kogumikus
Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodes
Rashid, Muhammad Haroon
;
Koel, Ants
;
Rang, Toomas
Silicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019
2020
/
p. 490-496
https://doi.org/10.4028/www.scientific.net/MSF.1004.490
artikkel kogumikus
5
artikkel kogumikus
Numerical simulations of wideband SiC N-N heterostructure diode
Patankar, Udayan Sunil
;
Koel, Ants
;
Pardy, Tamas
LAEDC 2020 : Latin American Electron Devices Conference, San José, Costa Rica, February 25-28, 2020
2020
/
4 p
https://doi.org/10.1109/LAEDC49063.2020.9073489
artikkel kogumikus
6
artikkel kogumikus
SEU study of wideband heterostructure diode for particle detection
Patankar, Udayan Sunil
;
Koel, Ants
2021 IEEE International Conference on Consumer Electronics (ICCE)
2021
/
4 p. : ill
https://doi.org/10.1109/ICCE50685.2021.9427613
artikkel kogumikus
7
artikkel ajakirjas
Short-circuit protection circuits for silicon-carbide power transistors
Sadik, Diane-Perle
;
Colmenares, Juan
;
Tolstoy, Georg
;
Rabkowski, Jacek
IEEE transactions on industrial electronics
2016
/
p. 1995-2004 : ill
https://doi.org/10.1109/TIE.2015.2506628
artikkel ajakirjas
8
artikkel kogumikus
SIC schottky diode rectifier bridge represented as the diffusion-welded stack
Korolkov, Oleg
;
Land, Raul
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Rang, Toomas
11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]
2016
/
p. 42
artikkel kogumikus
Kirjeid leitud 8, kuvan
1 - 8
pealkiri
278
1.
Characterization of silicon carbide (SiC) and graphene-based novel semiconductor devices = Ränikarbiidil (SiC) ja grafeenil pōhinevate uudsete pooljuhtstruktuuride karakteriseerimine
2.
Modelling of charge carrier non-isothermal transport in silicon and silicon carbide
3.
Intermediate layer in the metal-silicon carbide contact : investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion weldin
4.
An experimental study of diffusion welded contacts to p-type silicon carbide
5.
Comparison of Schottky parameters for diffusion-welded and sputter contacts to silicon carbide
6.
Dry reciprocating sliding wear behaviour of alumina–silicon carbide nanocomposite fabricated by ceramic injection molding
7.
Effect of atomic layer deposited aluminium oxide on mechanical properties of porous silicon carbide
8.
Experimental study of surface distortions in silicon carbide caused by diffusion welding
9.
Formation of Diffusion welded Al contacts to semiconductor silicon carbide
10.
Gate and base drivers for silicon carbide power transistors : an overview
11.
High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules
12.
Investigation of additional states in the silicon carbide surface after diffusion welding
13.
Investigation of planetary milling for nano-silicon carbide reinforced aluminium metal matrix composites
14.
Investigation of silicon carbide diode structures via numerical simulations including anisotropic effects
15.
Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbide
16.
Nano-silicon carbide reinforced aluminium produced by high-energy milling and hot consolidation
17.
Non-destructive eddy current measurments for silicon carbide heterostructure analysis
18.
Numerical simulation of a silicon carbide diode
19.
Self-Propagating High-Temperature Synthesis of Silicon Carbide Using Reactions Thermokinetic Coupling Approach
20.
Short-circuit protection circuits for silicon-carbide power transistors
21.
Silicon carbide - new challenge for power semiconductor devices
22.
Simulations of heterostructures based on 3C-4H and 6H-4H silicon carbide polytypes
23.
Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbide
24.
Some of comparative properties of diffusion welded contacts to 6H- and 4H-silicon carbide
25.
Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodes
26.
Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodes
27.
Mesoporous fibrous silicon nitride by catalytic nitridation of silicon
28.
Mesoporous fibrous silicon nitride by catalytic nitridation of silicon and selective laser melting
29.
Effect of carbide phase and binder chemical composition on surface fatigue of carbide composites [Electronic resource]
30.
Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-Well light emitting diode using diffusion bonding technique
31.
Characterization of Interfaces Between the Metal Film and Silicon Carbide Semiconductor = Metallkontakti ja ränikarbiidi vahelise liidespinna karakteriseerimine
32.
Comparative investigation of the graphene-on-silicon carbide and CVD graphene as a basis for biosensor application
33.
Investigation of the graphene-on-silicon-carbide and CVD graphene as a basis for bioimpedance sensor applications : poster
34.
Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimine
35.
The specificity of solid-phase interaction of aluminium with silicon carbide in the manufacture of diffusion-welded contacts to semiconductor devices
36.
Experimental comparison of two-level full-SiC and three-level Si–SiC quasi-Z-source inverters for PV applications
37.
A DLTS study of 4H-SiC-based p–n junctions fabricated by boron implantation
38.
A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC
39.
Al-SiC nanocomposites produced by high-energy milling and hot pressing
40.
An analysis of critical parameters of SiC JBS structures
41.
Analysis of barrier inhomogeneities of P-type Al/4H-SiC schottky barrier diodes
42.
Analysis of peak current for current crowding effect in 4H- and 6H-SiC Schottky structures
43.
Charge carrier transport in SiC Schottky interfaces : shape factor approach
44.
Clamp mode package diffusion welded power SiC Schottky diodes
45.
Comparative characteristics of 6H- and 4H-SiC surfaces in diffusion welding
46.
Comparative characteristics of diffusion welded Al contacts to 6H- and 4H-SiC substrates
47.
Comparison of individual SiC JBS chips and JBS stacks connected in series by diffusion welding
48.
Comparison of Si and SiC devices surge current capability by means of numerical simulations
49.
Comparison of the dynamic behaviour of complementary 6H- and 4H-SiC Schottky structures using numerical simulation
50.
Corrected accounting of electron-hole scattering in cross-term current equations for Si and SiC
51.
Current suppressing effect in alloy metal and 6H-SiC substrate Schottky contacts
52.
Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons
53.
Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons
54.
Diffusion welded Al contacts to p-type SiC
55.
Diffusion welding contacts to 6H-SiC substrates
56.
Diffusion welding techniques for power SiC Schottky packaging
57.
Diffusion welding technology for 6H-SiC substrates
58.
DLTS measurements on 4H-SiC JBS-diodes with boron implanted local p-n junctions
59.
Electron microscopy study of contact layers in n-type 4H-SiC after diffusion welding
60.
Electro-thermal simulations and forward surge current failure prediction for SiC diodes
61.
Experimental analysis of the dynamic performance of Si, GaAs and SiC diodes
62.
Experimental efficiency and thermal parameters evaluation in Full-SiC Quasi-Z-Source inverter
63.
Formation of large area Al contacts on 6H- and 4H-SiC substrates
64.
Generalized analytical model for SiC polytypic heterojunctions
65.
Hardness of hot consolidated Al-SiC nanocomposites from planetary milled powders
66.
High phonon-drag thermoelectric efficiency of SiC at low temperatures
67.
High voltage diffusion‐welded stacks on the basis of SiC Schottky diodes
68.
High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodes
69.
Hot spots caused by contact inhomogeneities in 4H- and 6H-SiC Schottky structures
70.
Impact of phonon drag effect on seebeck coefficient in p-6H-SiC : experiment and simulation
71.
Impact of phonon-drag effect on seebeck coefficient in SiC : experiment and simulation
72.
Interfaces to 6H-SiC substrates - technology and simulation
73.
Interpretation of some physical parameters of SiC Schottky interfaces manufactured by diffusion welding technology
74.
Investigation of charge carrier lifetime temperature-dependence in 4H-SiC diodes
75.
Investigation of electrical characteristics of SiC based complementary JBS structures
76.
Investigation of subcontact layers in SiC after diffusion welding
77.
Large area 4H-SiC power Schottky diode
78.
Large area 6H-SiC Schottky diode
79.
Large area high quality interfaces to SiC substrates - technology and modelling
80.
Leakage currents in 4H-SiC JBS diodes
81.
Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electrons
82.
Measurement of charge carrier lifetime temperature-dependence in 4H-SiC power diodes
83.
Measurements of charge carrier lifetime temperature dependence in 4H-SiC power diodes
84.
Microstructural, mechanical and corrosion behaviour of Al–Si alloy reinforced with SiC metal matrix composite
85.
Modeling of lattice heat conductivity and thermopower in SiC considering the four-phonon scattering processes
86.
Modelling of inhomogeneities of SiC Schottky interfaces
87.
Modelling of the tunneling current in metal alloy contacts to 6H- and 4H-SiC substrates
88.
Numerical analysis of the influence of deep energy level traps in SiC Schottky structures
89.
Numerical investigation of SiC devices performance considering the incomplecte dopant ionization
90.
Numerical simulation of P-type Al/4H-SiC schottky barrier diodes [Online resource]
91.
Numerical simulations of wideband SiC N-N heterostructure diode
92.
Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiers
93.
Numerical study of turn-off phenomenon in complementary 4H-SiC JBS rectifiers
94.
On the design process of a 6-kVA quasi-Z-inverter employing SiC power devices
95.
Oxidation-abrasion of TiC-based cermets in SiC medium
96.
Parametric simulation of SiC Schottky JBC structures
97.
Preliminary approach to the timing measurements for reverse recovery applied to the SiC Schottky diode model
98.
Preliminary investigation of diffusion welded contacts to p-type 6H-SiC
99.
Review of - SiC wide-bandgap heterostructure properties as an alternate semiconductor material
100.
Self-heating phenomenon and current suppressing effect at 6H-SiC Schottky interfaces
101.
Self-heating phenomenon and current suppressing effect at the SiC Schottky interfaces
102.
SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stack
103.
SiC Schottky diode for power converters
104.
SiC Schottky diode for use in power convertors
105.
SIC schottky diode rectifier bridge represented as the diffusion-welded stack
106.
SiC и GaAs диоды в устройствах силовой электроники
107.
Sic! : [sündmused Tallinna Tehnikaülikoolis : rubriik]
108.
SiC-diode forward surge current failure mechanisms : experiment and simulation
109.
SiC-diodes forward surge current failure mechanisms : experiment and simulation
110.
Simulations of wide bandgap SiC N-N heterostructure diode
111.
Static and dynamic behavior of the SiC complementary JBS structures
112.
Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe
113.
Temperature influence on current suppressing effect in SiC Schottky diode
114.
The basic parameters of diffusion welded Al Schottky contacts to p- and n-SiC
115.
The measurement and tuning of SiC diode voltage doubler represented as diffusion-welded stack [Online resource]
116.
Thermopower measurements in 4H-SiC and Theoretical calculations considering the phonon drag effect
117.
Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrate
118.
Исследование p-n-переходов на основе 4H-SiC, изготовленных имплантацией бора, методом нестационарной емкостной спектроскопии
119.
Низкотемпературный отжиг слаболегированных слоев n-4H-SiC после облучения быстрыми электронами
120.
A double-emitter silicon differential strain sensitive transistor with an accelerating field in its base
121.
Achieving accuracy in charge carrier mobility modelling in silicon
122.
Additive manufacturing of silicon-wollastonite/bioactive glass based biomaterials by Selective Laser Melting
123.
Analyses of frequency dependencies of Q factor for planar inductors on silicon
124.
ArF laser ablation deposited NdFeB films on silicon
125.
Carrier collection losses in interface passivated amorphous silicon thin-film solar cells
126.
Combustion synthesis of nanoscale boron and silicon carbides
127.
Diffusion welded contacts for silicon semiconductor devices
128.
Electrical resistivity of additively manufactured silicon steel for electrical machine fabrication
129.
Electrochemical deposition of thin polypyrrole films on silicon substrates
130.
Electrochemically deposited ultrathin polypyrrole films on silicon
131.
Hardware trojan insertion in finalized layouts: from methodology to a silicon demonstration
132.
Hysteresis measurements and numerical losses segregation of additively manufactured silicon steel for 3D printing electrical machines
133.
Improved amorphous silicon passivation layer for heterojunction solar cells with post-deposition plasma treatment
134.
Influence of excitonic scattering on charge carrier ambipolar diffusion in silicon
135.
Investigation of the silicon/polypyrrole interface by pulsed photoluminescence and IR spectroscopic ellipsometry during electrochemical deposition
136.
Iron losses evaluation of additively manufactured 6.5 % silicon steel
137.
Low-noise CMOS-charge amplifier for a silicon strip detector
138.
Macroporous silicon-wollastonite scaffold with Sr/Se/Zn/Mg-substituted hydroxyapatite/chitosan hydrogel
139.
Maleimide functionalized silicon surfaces for biosensing investigated by in-situ IRSE and EQCM
140.
Manufacturing of silicon – Bioactive glass scaffolds by selective laser melting for bone tissue engineering
141.
Measurement of the lifetime of nonequilibrium charge carriers in silicon using photoelectric methods
142.
MEKTORY viib revolutsioonilise idee Silicon Valleysse! : [ärimudeli konkursist]
143.
Miks on vaja TTÜ uut kodu Silicon Valleys
144.
Modeling of charge carrier non-isothermal transport parameters in silicon
145.
Novel silicon-wollastonite based scaffolds for bone tissue engineering produced by selective laser melting
146.
Optimisation of trabecular bone mimicking silicon-hydroxyapatite based composite scaffolds processed through selective laser melting
147.
Post-silicon validation of IEEE 1687 reconfigurable scan networks
148.
Production of silicon free master alloys in Estonia
149.
Rapid prototyping of silicon structures by aid of laser and abrasive-jet machining
150.
Recombination behaviour at the ultra-thin polypyrrole film/silicon interface investigated by in-situ pulsed photoluminescence
151.
Reversible electrowetting on silanized silicon nitride
152.
Selective laser sintered bio-inspired silicon-wollastonite scaffolds for bone tissue engineering
153.
Silicon integrated circuit fabrication process modeling and simulation
154.
Silicon planar technology process modeling
155.
Silicon Valley inspireerivad õppetunnid : [ka koostööst TTÜga]
156.
Skeemipesa ideed lendavad Silicon Valleyni välja
157.
Startup-üritused Silicon Valleys : [TTÜ tudengid Räniorus]
158.
Tallinna Tehnikaülikooli tudengite reis Silicon Valleysse : [innovaatiliste ärimudelite konkursi Stratos Futuris võitjate auhinnareis]
159.
Technonomics of manufacturing of silicon microsystems on WSI
160.
Tehnikaülikool avas eile Silicon Valleys teadussaatkonna
161.
Tehnikaülikool otsib Silicon Valleys koostööd
162.
The role of silicon in the hot dip galvanizing process
163.
The silicon photodiodes as standard detectors in optical radiometry
164.
TTÜ avas esinduse maailma IT-pealinnas Silicon Valleys
165.
TTÜ kübervastuluure start-up Silicon Valleys
166.
TTÜ saadab oma tudengeid Silicon Valleysse õppima : [lühisõnum]
167.
TTÜ saadab parimad tudengid Silicon Valleysse õppima : [konverentsil Stratos Futuris esitleti tudengite innovaatilisi ärimudeleid]
168.
TTÜ Startup Smart Load Solutions Silicon Valley`s : "Idee üksi ei maksa amidagi"
169.
TTÜ tudengid murdsid välja Silicon Valleysse : [õppereisist]
170.
Ultrathin polypyrrole films on silicon substrates
171.
Use of atomic-force microscopy for characterization of silicon, implated with heavy ions at high doses
172.
Uudishimulik eestlane Silicon Valleys
173.
A new synthesis pathway for molybdenum carbide nanopowder by solution combustion
174.
Abrasive erosion of chromium carbide based cermets
175.
Abrasive erosion of titanium carbide-base cermets
176.
Abrasive wear and erosion of titanium carbide based cermets
177.
Abrasive wear and mechanical properties of carbide composites
178.
Abrasive wear of chromium carbide based cermets
179.
Abrasive wear performance of carbide based composites
180.
Abrasive wear performance of carbide composites
181.
Adhesion wear performance of carbide-base composites
182.
Adhesive wear behaviour of carbide composites and tool steels
183.
Advanced chromium carbide based hardfacings
184.
Behaviour of carbide composites in different operation conditions
185.
Blanking performance and fatigue endurance of carbide composites
186.
Boron carbide based composites manufacturing and recycling features
187.
Boron carbide based composites microstructure and properties relationships to processing features
188.
Carbide grain and structure formation in Cr3C2-base cermets during sintering
189.
Carbide grain growth in Cr3C2-based cermets during sintering
190.
Characteristics of titanium- and cromium carbide-base cermets and their application
191.
Chromium carbide based cermets as the wear resistant materials
192.
Comparing tungsten carbide based composites reinforced by alumina nanofibers or zirconia
193.
Compound carbide composites produced by diffusion bonding
194.
Corrosion of titanium carbide cermets in mineral acids
195.
Determination of the mechanical properties of carbide composites by spherical indentation
196.
Directly electrospun electrodes for electrical double-layer capacitors from carbide-derived carbon
197.
Dual compounds "cemented carbide+steel" produced by diffusion bonding
198.
Effect of carbide produces technique on the structure and properties of the Cr3C2-Ni cermets
199.
Effect of microstructure on the erosive wear of titanium carbide-based cermets
200.
Effect of oxidation on abrasive wear behaviour of titanium carbide based composites in silica medium
201.
Effect of residual stresses on the surface fatigue of TiC-based carbide composites
202.
Effect of sintering method on surface fatigue of carbide composites
203.
Effect of temperature on erosive and abrasive wear of carbide reinforced powder steels
204.
Electroreduction of oxygen on carbide-derived carbon supported Pd catalysts
205.
Elevated temperature wear of chromium carbide based cermets
206.
Erosion and abrasion of chromium carbide based cermets produced by different methods
207.
Estimation of erosive and adhesive wear resistance of titanium carbide-base cemented carbides
208.
Evolution of the characteristics of light weight boron carbide cermet after heat treatment
209.
Evolution of the characteristics of light weight boron carbide cermet after heat treatment [Electronic resource]
210.
Fatigue mechanics of carbide composites
211.
Fatigue performance of carbide composites
212.
Friction and wear changes of boron carbide cermet depending on the structure
213.
Friction and wear changes of boron carbide cermets depending on the structure
214.
High energy milling of WС-FeСr cemented carbide
215.
Impact wear of chromium carbide based cermets
216.
Influence of microstructure and chemical composition on toughness and wear resistance of carbide composites
217.
Investigation of the surface fatigue of carbide composites and PVD hard coatings
218.
Mechanical characterization and modeling of chromium carbide based composites
219.
Mechanical properties of chromium carbide based cermets at micro-level
220.
Mechanical properties of chromium carbide based cermets at micro-level [Electronic resource]
221.
Mechanically activated synthesis of chromium carbide
222.
Mechanically activated synthesis of nanocrystalline chromium carbide powders
223.
Mechanically activated synthesized zirconium carbide substrate to make ZrC-Mo cermets
224.
Methods of improving of carbide steel properties
225.
Micromechanical properties and erosive wear performance of chromium carbide based cermets
226.
Microstructure and properties of in‐situ high entropy alloy/tungsten carbide composites by mechanical alloying
227.
Multi-scale characterization and modeling of chromium carbide based cermets
228.
Nanoindentation analysis and micromechanical modeling of chromium carbide based composites
229.
Nanoindentation testing and modeling of chromium carbide based composites
230.
Nanosize molybdenum carbide preparation by sol-gel combustion synthesis with subsequent fast heating
231.
Nanosized molybdenum carbide synthesized by solution combustion synthesis with subsequent thermal treatment
232.
Novel pathway for the combustion synthesis and consolidation of boron carbide
233.
Oxidation resistance of titanium and chromium carbide-base cermets
234.
Oxygen reduction on silver nanoparticles supported on carbide-derived carbons
235.
Performance and failure of carbide composites in different wear conditions
236.
Performance of carbide composites for cyclic loading applications
237.
Performance of carbide composites in cyclic loading conditions
238.
Performance of carbide composites in cyclic loading wear conditions
239.
Plasma transferred arc hardfacings reinforced by chromium carbide based cermet particles
240.
Plasma transferred arc hardfacings reinforced by chromium carbide-based cermet particles
241.
Processing and tribological properties of chromium carbide based cermets
242.
Production of hard refractory compounds on base of aluminium and boron carbide powders
243.
Reactive carburizing sintering - a novel production method for high quality chromium carbide-nickel cermets
244.
Reactive sintered chromium and titanium carbide-based cermets = Reaktsioonpaagutatud kroom- ja titaankarbiidsed kermised
245.
Reactive sintering of zirconium carbide based systems
246.
Reliability of dual compounds “carbide composite+steel” produced by diffusion welding
247.
Sintering of zirconium carbide-based composites
248.
Sliding wear of chromium carbide based cermets under different wear conditions
249.
Small scale mechanical properties of chromium carbide-based materials
250.
Solid phase's transformations in boron carbide based composites during heat treatment
251.
Solution combustion synthesis of nanostructured molybdenum carbide
252.
Structural-selective wearing model of cemented non-tungsten carbide composites
253.
Structure formation and characteristics of chromium carbide-iron-titanium cermets
254.
Technological peculiarities of chromium carbide-based iron alloy bonded cermet
255.
The formation of structure and change of properties during heat treatment of boron carbide cermets
256.
The formation of structure and change of properties during heat treatment of boron carbide composites
257.
The formation of wear resistant properties of boron carbide cermet
258.
The influence of binder phase status on the wear resistance of boron carbide cermet by friction
259.
The influence of processing parameters on mechanical properties of spark plasma sintered chromium carbide based cermets
260.
The influence of refractory composition in binder phase on wear properties of boron carbide aluminium composites
261.
The influence of Sinter/HIP sintering on the properties of chromium carbide based cermets
262.
The influence of sinter/HIP technology on reactive sintering of chromium carbide based cermets
263.
The light weight boron carbide cermet as tribomaterial
264.
The metal ceramic boron carbide light alloy produced by powder metallurgy
265.
The oxidation of chromium and titanium carbide based hard metals
266.
The structure and properties forming in boron carbide aluminium composites during processing
267.
Thermal residual stresses in chromium carbide based cermets
268.
Thermal shock resistance of chromium carbide-based cermets
269.
Thermally induced cracking in aluminum/boron carbide composite
270.
Thermophysical properties and thermal shock resistance of chromium carbide based cermets
271.
Thermo-physical properties and thermal shock resistance of chromium carbide based cermets
272.
Titanium and chromium carbide based cermets
273.
Toughness characteristics of carbide composites
274.
Toughness of carbide composites and their durability in application
275.
Tungsten carbide material tribology and circular economy relationship in polymer and composites industries
276.
Wear and friction in boron carbide cermet-steel sliding system
277.
Wear and friction in boron carbide cermet-steel sliding system [Electronic resource]
278.
Wearing model of cemented carbide composites
võtmesõna
40
1.
silicon carbide (SiC)
2.
nano-silicon carbide
3.
silicon carbide
4.
silicon carbide JBS diodes
5.
Al2O3–SiC
6.
p-type 4H-SiC
7.
SiC
8.
SiC heterostructure
9.
SiC JBS diodes
10.
SiC Schottky diodes
11.
3C-SiC
12.
4H-SiC
13.
6H-SiC
14.
amorphous silicon
15.
porous silicon
16.
primary silicon
17.
role of silicon
18.
silicon
19.
silicon compounds
20.
silicon nitride
21.
silicon strain gauge
22.
boron carbide
23.
carbide
24.
carbide composite
25.
carbide composites
26.
carbide inserts
27.
carbide reinforcement
28.
carbide solid solutions
29.
carbide-derived carbon
30.
Cemented Carbide
31.
cemented tungsten carbide-cobalt
32.
chromium carbide
33.
chromium carbide-based cermets
34.
molybdenum carbide
35.
recycling carbide
36.
zirconium carbide
37.
titanium carbide
38.
titanium carbide-based cermets
39.
tungsten and titanium carbide
40.
tungsten carbide
allikas
27
1.
Silicon Carbide and Related Materials : ECSCRM2000 : proceedings of the 3rd European Conference on Silicon Carbide and Related Materials : Kloster Banz, Germany, September 2000
2.
Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31-September 4, 2004, Bologna, Italy
3.
Silicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation
4.
Silicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
5.
Silicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
6.
Silicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA
7.
Silicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019
8.
Silicon carbide and related materials
9.
Silicon Carbide and Related Materials 2002 : ECSCRM2002
10.
Silicon Carbide and Related Materials 2003
11.
Silicon carbide and related materials 2005
12.
Silicon carbide and related materials 2006
13.
Silicon carbide and related materials 2007
14.
Тезисы докладов рeспубликанской научно-технической конференций [sic] по автомобильном [sic] дорогам и геодезии : [23-25 октября]
15.
Abstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA
16.
Abstracts of the 3rd European Conference on Silicon Carbide and Related Materials : ECSCRM'2000 : Sept. 3-7, 2000, Kloster Banz, Germany
17.
Final programm of the 12th International Conference on Silicon Carbide and Related Materials : ICSCRM2005 : Pittsburgh, PA, USA
18.
International Conference on Silicon Carbide and Related Materials 2001 - ICSCRM2001 - October 28-November 2, 2001 (Epochal Tsukuba, Ibaraki, Japan) : technical digest
19.
The 9th European Conference on Silicon Carbide and Related Materials : abstract book : St. Petersburg Russia, 2-6 September, 2012
20.
11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]
21.
5th European Conference on Silicon Carbide and Related Materials : book of abstracts : 31 August-4 September 2004, Bologna, Italy
22.
ISOS XVII Berlin 2014 : the 17th International Symposium on Silicon Chemistry jointly with the 7th European Silicon Days : Berlin, August 3-8, 2014
23.
Phosphorus, sulfur and silicon
24.
Phosphorus, sulfur and silicon and the related elements
25.
Phosphorus, sulfur, and silicon and the related elements
26.
Phosphorus, sulphur, and silicon and the related elements
27.
Silicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Mat
märksõna
1
1.
Silicon Valley