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101

artikkel kogumikus

Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbideKorolkov, Oleg; Rang, ToomasSilicon Carbide and Related Materials 2001 : ICSCRM2001 : proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28 - November 2, 2001. Part 22002 / p. 941-944 : ill

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102

artikkel kogumikus

Some of comparative properties of diffusion welded contacts to 6H- and 4H-silicon carbideKorolkov, Oleg; Rang, ToomasInternational Conference on Silicon Carbide and Related Materials 2001 - ICSCRM2001 - October 28-November 2, 2001 (Epochal Tsukuba, Ibaraki, Japan) : technical digest2001 / p. 625-626 : ill https://www.researchgate.net/publication/250340293_Some_Comparative_Properties_of_Diffusion-Welded_Contacts_to_6H_and_4H_Silicon_Carbide

artikkel kogumikus

103

artikkel kogumikus

Static and dynamic behavior of the SiC complementary JBS structuresKurel, Raido; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 59-62 : ill

artikkel kogumikus

104

artikkel ajakirjas EST / artikkel ajakirjas ENG

ZrC-TiC-MoSi2 ceramic composite by spark plasma sinteringHussainova, Irina; Minasyan, Tatevik; Liu, Le; Aydinyan, SofiyaJournal of Physics: Conference Series2020 / art. 012028 https://doi.org/10.1088/1742-6596/1527/1/012028 Conference Proceedings at Scopus Article at Scopus Article at WOS

artikkel ajakirjas EST / artikkel ajakirjas ENG

105

artikkel kogumikus

Temperature effects in alloy metal and 6H-SiC substrate Schottky contacts caused by the current suppressing effectRang, Toomas; Blum, AlfonsProceedings of the International Conference and Exhibition Micro Materials : MicroMat '97, April 16-18, 1997, Berlin, Germany1997 / p. 591-596

artikkel kogumikus

106

artikkel kogumikus

The basic Schottky parameters for combined diffusion welded and sputter metal contactsKuznetsova, Natalja; Korolkov, Oleg; Rang, Toomas; Pikkov, MihhailBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 47-50 : ill

artikkel kogumikus

107

artikkel kogumikus

The measurement and tuning of SiC diode voltage doubler represented as diffusion-welded stack [Online resource]Toompuu, Jana; Sleptšuk, Natalja; Land, Raul; Korolkov, Oleg; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600963

artikkel kogumikus

108

artikkel ajakirjas

The specificity of solid-phase interaction of aluminium with silicon carbide in the manufacture of diffusion-welded contacts to semiconductor devicesSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas; Mikli, ValdekElektronika ir elektrotechnika = Electronics and electrical engineering2012 / p. 45-48 : ill https://eejournal.ktu.lt/index.php/elt/article/view/2610

artikkel ajakirjas

109

artikkel kogumikus

Thermopower measurements in 4H-SiC and theoretical calculations considering the phonon drag effectGrivickas, V.; Stölzer, M.; Velmre, Enn; Udal, Andres; Grivickas, P.; Syväjärvi, M.; Yakimova, R.; Bikbajevas, V.Silicon Carbide and Related Materials : ECSCRM2000 : proceedings of the 3rd European Conference on Silicon Carbide and Related Materials : Kloster Banz, Germany, September 20002001 / p. 491-494 : ill https://www.researchgate.net/publication/240833914_Thermopower_Measurements_in_4H-SiC_and_Theoretical_Calculations_Considering_the_Phonon_Drag_Effect

artikkel kogumikus

110

artikkel kogumikus

Thermopower measurements in 4H-SiC and Theoretical calculations considering the phonon drag effectGrivickas, V.; Stölzer, M.; Velmre, Enn; Udal, Andres; Grivickas, P.; Syväjärvi, M.; Yakimova, R.; Bikbajevas, V.Abstracts of the 3rd European Conference on Silicon Carbide and Related Materials : ECSCRM'2000 : Sept. 3-7, 2000, Kloster Banz, Germany2000 / p. 144

artikkel kogumikus

111

artikkel kogumikus

Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrateRang, Toomas; Blum, AlfonsProceedings of the ELECTROSOFT 96, May 28-30, San-Miniato, Italy1996 / p. 347-356

artikkel kogumikus

112

artikkel kogumikus

Two-dimensional nonisothermal analysis of the current crowding effect at nonuniform SiC Schottky contacts using device simulator DYNAMIT-2DTKurel, Raido; Udal, AndresBEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia2002 / p. 51-54 : ill

artikkel kogumikus

113

artikkel ajakirjas

Исследование p-n-переходов на основе 4H-SiC, изготовленных имплантацией бора, методом нестационарной емкостной спектроскопииIvanov, Pavel; Potapov, Alexander; Samsonova, Tatyana; Korolkov, Oleg; Sleptšuk, NataljaФизика и техника полупроводников2011 / с. 1358-1362 : ил

artikkel ajakirjas

114

artikkel ajakirjas

Низкотемпературный отжиг слаболегированных слоев n-4H-SiC после облучения быстрыми электронамиKorolkov, Oleg; Kozlovski, Vitali; Lebedev, Alexander; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasФизика и техника полупроводников2019 / с. 991-994 https://doi.org/10.21883/FTP.2019.07.47879.9089

artikkel ajakirjas

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