Comparative results of low temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electrons
vastutusandmed
Vitalii V. Kozlovski, Oleg Korolkov, Alexander A. Lebedev, Jana Toompuu, Natalja Sleptsuk
ilmumiskoht
Zürich
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 231-236
seeria-sari
konverentsi nimetus, aeg
18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019, 29 Sept. - 4 Oct. 2019
konverentsi toimumispaik
Kyoto, Japan
ISSN
0255-5476
ISBN
978-303571579-8
märkused
Bibliogr.: 19ref
teaduspublikatsioon
teaduspublikatsioon
TTÜ struktuuriüksus
keel
inglise
Kozlovski, V.V., Korolkov, O., Lebedev, A.A., Toompuu, J., Sleptsuk, N. Comparative results of low temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electrons // Silicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019. Zürich : Trans Tech Publications, 2020. p. 231-236. (Materials science forum ; 1004).