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Heinmaa, I. (author)
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1
journal article
Hydrogen interaction with point defects in the Si-SiO2 structures and its influence on the interface properties
Kropman, Daniel
;
Mellikov, Enn
;
Kärner, T.
;
Ugaste, Ülo
;
Laas, Tõnu
;
Heinmaa, I.
;
Abru, Uno
;
Medvid, A.
Solid state phenomena
2008
/
p. 345-350
https://www.scientific.net/SSP.131-133.345
journal article
2
journal article
Impurity interaction with point defects in the Si-SiO2 structures and its influence on the interface properties
Kropman, Daniel
;
Mellikov, Enn
;
Kärner, T.
;
Ugaste, Ülo
;
Laas, Tõnu
;
Heinmaa, I.
;
Medvid, A.
Materials science and engineering : B
2006
/
p. 222-226 : ill
https://www.sciencedirect.com/science/article/pii/S0921510706004375
journal article
3
journal article
Interaction between point defects in the Si-Si=2 system
Kropman, Daniel
;
Kärner, T.
;
Samoson, Ago
;
Heinmaa, I.
;
Mellikov, Enn
Nuclear instruments & methods in physics research. Section B
2002
/
p. 78-82
https://www.sciencedirect.com/science/article/pii/S0168583X0100862X
journal article
4
journal article
Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface
Kropman, Daniel
;
Mellikov, Enn
;
Öpik, Andres
;
Lott, Kalju
;
Kärner, T.
;
Heinmaa, I.
;
Laas, Tõnu
;
Medvid, A.
;
Skroupa, W.
;
Prucnal, S.
;
Rebohle, L.
;
Zvyagin, S.
;
Cizmar, E.
;
Ozerov, M.
;
Wosnitsa, J.
Thin solid films
2010
/
9, p. 2374-2376
https://www.sciencedirect.com/science/article/abs/pii/S0040609009014564
journal article
5
journal article
Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface
Kropman, Daniel
;
Mellikov, Enn
;
Lott, Kalju
;
Kärner, T.
;
Heinmaa, I.
;
Laas, Tõnu
;
Medvid, A.
;
Skroupa, W.
;
Prucnal, S.
;
Zvyagin, S.
;
Cizmar, E.
;
Ozerov, M.
;
Wosnitsa, J.
Solid state phenomena
2010
/
p. 145-148 : ill
https://www.sciencedirect.com/science/article/abs/pii/S0040609009014564
journal article
6
book article
Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interface
Kropman, Daniel
;
Mellikov, Enn
;
Lott, Kalju
;
Kärner, T.
;
Heinmaa, I.
Getterring and defect engineering in semiconductor technology XIII : CADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Döllnsee-Schorfheide, north of Berlin, Germany, September 26 - October 02, 2009
2010
/
p. 145-148 : ill
book article
7
book article
Interaktsioon punktdefektide ja lisandite vahel süsteemis Si-SiO2 ja nende mõju piirpinna omadustele : [ettekande sisukokkuvõte]
Kropman, Daniel
;
Kärner, T.
;
Heinmaa, I.
Eesti Füüsika Seltsi aastaraamat 2008
2009
/
lk. 119-120
book article
8
journal article
Investigation of kukersite structure using NMR and oxidative cleavage : on the nature of phenolic precursors in the kerogen of Estonian kukersite
Lille, Ülo
;
Heinmaa, I.
;
Müürisepp, Aleksander-Mati
;
Pehk, Tõnis
Oil shale
2002
/
2, p. 101-116 : ill
https://www.researchgate.net/publication/288156758_Investigation_of_kukersite_structure_using_NMR_and_oxidative_cleavage_On_the_nature_of_phenolic_precursors_in_the_kerogen_of_Estonian_kukersite
journal article
9
journal article
Molecular model of Estonian kukersite kerogen evaluated by 13C MAS NMR spectra
Lille, Ülo
;
Heinmaa, I.
;
Pehk, Tõnis
Fuel
2003
/
p. 799-804 : ill
https://www.sciencedirect.com/science/article/pii/S0016236102003587
journal article
10
book article
Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties
Kropman, Daniel
;
Arbu, Uno
;
Kärner, T.
;
Ugaste, Ülo
;
Mellikov, Enn
;
Kauk, Marit
;
Heinmaa, I.
;
Samoson, Ago
;
Medvid, A.
Gettering and defect engineering in semiconductor technology. XI
2005
/
p. 333-338 : ill
https://www.researchgate.net/publication/243760197_Point_Defects_Interaction_with_Extended_Defects_and_Impurities_and_Its_Influence_on_the_Si-SiO_2_System_Properties
book article
11
book article
Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
Kropman, Daniel
;
Mellikov, Enn
;
Öpik, Andres
;
Lott, Kalju
;
Volobujeva, Olga
;
Kärner, T.
;
Heinmaa, I.
;
Laas, Tõnu
;
Medvid, A.
Radiation Interaction with Materials and its use in Technologies : Kaunas, 24-27.09.2008
2008
/
p. 204-207
https://www.sciencedirect.com/science/article/pii/S0921452609010321
book article
12
journal article
Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
Kropman, Daniel
;
Mellikov, Enn
;
Öpik, Andres
;
Lott, Kalju
;
Volobujeva, Olga
;
Kärner, T.
;
Heinmaa, I.
;
Laas, Tõnu
;
Medvid, A.
Physica B : condensed matter
2009
/
23/24, p. 5153-5155 : ill
journal article
13
journal article
Synthesis and electrical properties of potassium substituted hydrosodalites
Mere, Arvo
;
Hyvonen, D.
;
Heinmaa, I.
;
Ruus, Tõnu
Proceedings of SPIE
2001
/
p. 303-306
journal article
Number of records 13, displaying
1 - 13
author
4
1.
Heinmaa, A.
2.
Heinmaa, I.
3.
Heinmaa, Ivo
4.
Heinmaa, Mihkel
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