Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons

vastutusandmed
A.A. Lebedev, K.S. Davydovskaya, V.V. Kozlovski, O. Korolkov, N. Sleptsuk, J. Toompuu
ilmumiskoht
Zurich
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 447-450 : ill
konverentsi nimetus, aeg
11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016
konverentsi toimumispaik
Halkidiki, Greece
võtmesõna
SiC
radiation defects
electrons
carrier removal rate
ISSN
0255-5476
ISBN
978-3-0357-1043-4
märkused
Bibliogr.: 11 ref
keel
inglise
Lebedev, A.A., Davidovskaja, K.S., Kozlovski, V.V., Korolkov, O., Sleptšuk, N., Toompuu, J. Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons // Silicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece. Zurich : Trans Tech Publications, 2017. p. 447-450 : ill. (Materials science forum ; 897).