Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation
vastutusandmed
D.Kropman, T.Kärner, U.Abru, Ü.Ugaste, E.Mellikov
allikas
ajakirja aastakäik number kuu
459
ilmumisaasta
leheküljed
1/2, p. 53-57 : ill
ISSN
0040-6090
märkused
Bibliogr.: 13 ref
Kropman, D., Kärner, T., Abru, U., Ugaste, Ü., Mellikov, E.* Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formation // Thin solid films (2004) 459, 1/2, p. 53-57 : ill.