Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties

vastutusandmed
Daniel Kropman, Tiit Kärner, Sergei Dolgov, Ivo Heinmaa, Tõnu Laas, and Charalampos A. Londos
ajakirja aastakäik number kuu
Vol. 8, 3
ilmumisaasta
leheküljed
p. 694-696 : ill
võtmesõna
hydrogen impurities
EPR
NMR
ISSN
1610-1642
märkused
Bibliogr.: 6 ref
keel
inglise
Kropman, D., Kärner, T., Dolgov, S., Heinmaa, I., Laas, T., Londos, C.A. Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties // Physica status solidi (c) (2011) Vol. 8, 3, p. 694-696 : ill. https://www.sciencedirect.com/science/article/pii/S0040609009014564