prindi

Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons

autor
Lebedev, Alexander A.
Davidovskaja, Klavdia
Kozlovski, Vitali V.
Korolkov, Oleg
Sleptšuk, Natalja
Toompuu, Jana
vastutusandmed
A.A. Lebedev, K.S. Davydovskaya, V.V. Kozlovski, O. Korolkov, N. Sleptsuk, J. Toompuu
allikas
Silicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
ilmumiskoht
Zurich
kirjastus/väljaandja
Trans Tech Publications
ilmumisaasta
2017
leheküljed
p. 447-450 : ill
seeria-sari
Materials science forum ; 897
konverentsi nimetus, aeg
11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016
konverentsi toimumispaik
Halkidiki, Greece
leitav
https://doi.org/10.4028/www.scientific.net/MSF.897.447
märksõna
pooljuhtdioodid
Schottky barjäär
ränikarbiid
kõrgepingeseadised
keevisliited
võtmesõna
SiC
radiation defects
electrons
irradiation
carrier removal rate
reverse recovery time
ISSN
0255-5476
ISBN
978-3-0357-1043-4
märkused
Bibliogr.: 11 ref
TTÜ struktuuriüksus
Thomas Johann Seebecki elektroonikainstituut
keel
inglise
Lebedev, A.A., Davidovskaja, K.S., Kozlovski, V.V., Korolkov, O., Sleptšuk, N., Toompuu, J. Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons // Silicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece. Zurich : Trans Tech Publications, 2017. p. 447-450 : ill. (Materials science forum ; 897). https://doi.org/10.4028/www.scientific.net/MSF.897.447