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1
journal article
A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation
Ivanov, Pavel
;
Potapov, Alexander
;
Samsonova, Tatyana
;
Korolkov, Oleg
;
Sleptšuk, Natalja
Semiconductors
2011
/
p. 1306-1310 : ill
https://doi.org/10.1134/S1063782611100101
journal article
2
journal article
Impurity interaction with point defects in the Si-SiO2 structures and its influence on the interface properties
Kropman, Daniel
;
Mellikov, Enn
;
Kärner, T.
;
Ugaste, Ülo
;
Laas, Tõnu
;
Heinmaa, I.
;
Medvid, A.
Materials science and engineering : B
2006
/
p. 222-226 : ill
https://www.sciencedirect.com/science/article/pii/S0921510706004375
journal article
3
journal article
Investigation of strain relaxion mechanism in Si-SiO2 system during the process of its formation
Kropman, Daniel
;
Poll, V.
;
Kärner, T.
;
Ugaste, Ülo
;
Mellikov, Enn
;
Arbu, Uno
;
Paomets, V.
Physica status solidi (a)
2003
/
2, p. 297-301
https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.200306611
journal article
4
book article
Simulations of wide bandgap SiC N-N heterostructure diode
Patankar, Udayan Sunil
;
Koel, Ants
;
Pardy, Tamas
2020 IEEE International Conference on Consumer Electronics (ICCE), Las Vegas, NV, USA, January 4-6, 2020
2020
/
4 p
https://doi.org/10.1109/ICCE46568.2020.9043130
book article
5
book article
Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
Kropman, Daniel
;
Mellikov, Enn
;
Öpik, Andres
;
Lott, Kalju
;
Volobujeva, Olga
;
Kärner, T.
;
Heinmaa, I.
;
Laas, Tõnu
;
Medvid, A.
Radiation Interaction with Materials and its use in Technologies : Kaunas, 24-27.09.2008
2008
/
p. 204-207
https://www.sciencedirect.com/science/article/pii/S0921452609010321
book article
6
book article
Structure-reactivity relationships for organosilicon compounds revisited
Ploom, Anu
;
Tuulmets, Ants
ISOS XVII Berlin 2014 : the 17th International Symposium on Silicon Chemistry jointly with the 7th European Silicon Days : Berlin, August 3-8, 2014
2014
book article
7
journal article
Structure-reactivity relationships in organosilicon chemistry revisited
Ploom, Anu
;
Tuulmets, Ants
;
Järv, Jaak
Central European journal of chemistry
2011
/
p. 2910-916
https://link.springer.com/article/10.2478/s11532-011-0075-x
journal article
8
book article
Зависимость между содержанием P2O5 и SiO2 в оболовых фосфоритах
Veiderma, Mihkel
Сборник статей по химии и химической технологии. 10
1964
/
с. 299-304 : илл
https://www.ester.ee/record=b2181961*est
https://digikogu.taltech.ee/et/Item/9569e6db-150a-42c8-bf3b-765725dfd969
book article
9
book article
Создание и свойства высокоомных эпитаксиальных слоев кремния большой площади
Vinnal, J.A.
;
Kõverik, Kait
;
Tarma, M.
Тезисы докладов республиканской научно-технической конференции, посвященной 80-летию со дня изобретения радио А. С. Поповым
1975
/
с. 3
https://www.ester.ee/record=b1322122*est
book article
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