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journal article

DLTS measurements on 4H-SiC JBS-diodes with boron implanted local p-n junctionsIvanov, Pavel; Korolkov, Oleg; Samsonova, Tatyana; Sleptšuk, Natalja; Potapov, Alexander; Toompuu, Jana; Rang, ToomasMaterials science forum2011 / p. 409-412 https://www.researchgate.net/publication/272046403_DLTS_measurements_on_4H-SiC_JBS-diodes_with_boron_implanted_local_p-n_junctions

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27

journal article

A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantationIvanov, Pavel; Potapov, Alexander; Samsonova, Tatyana; Korolkov, Oleg; Sleptšuk, NataljaSemiconductors2011 / p. 1306-1310 : ill https://doi.org/10.1134/S1063782611100101

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28

book article

Electron microscopy study of contact layers in n-type 4H-SiC after diffusion weldingKorolkov, Oleg; Sleptšuk, Natalja; Sitnikova, A.; Rang, ToomasBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 91-94 : ill

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29

book article

Experimental study of surface distortions in silicon carbide caused by diffusion weldingMizsei, Janos; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 53-56 : ill

book article

30

dissertation

Formation of Diffusion welded Al contacts to semiconductor silicon carbideKorolkov, Oleg2004

dissertation

31

book article

Formation of large area Al contacts on 6H- and 4H-SiC substratesKorolkov, Oleg; Rang, ToomasAbstracts of the 3rd European Conference on Silicon Carbide and Related Materials : ECSCRM'2000 : Sept. 3-7, 2000, Kloster Banz, Germany2000 / p. 188 https://www.scientific.net/MSF.353-356.603

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32

book article

Formation of large area Al contacts on 6H- and 4H-SiC substratesKorolkov, Oleg; Rang, ToomasSilicon Carbide and Related Materials : ECSCRM2000 : proceedings of the 3rd European Conference on Silicon Carbide and Related Materials : Kloster Banz, Germany, September 20002001 / p. 603-606 : ill

book article

33

book article

GaAs based diffusion welded high voltage diode stacks [Electronic resource]Toompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Voitovitš, Viktor; Rang, ToomasIEEE International Conference on Semiconductor Electronics CD-ROM Proceedings2010 / [4] p https://ieeexplore.ieee.org/document/5549505

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34

book article

High quality metal ceramic interfaces using diffusion welding technologyKorolkov, Oleg; Rang, ToomasProceedings of the ASDAM'96, Oct. 20-24, 1996, Bratislava, Slovakia1996 / p. 309-312

book article

35

book article

High voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasICSRM 2015 : program guide2015 / p. 73

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36

book article

High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasSilicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy2016 / p. 790-794 : ill http://dx.doi.org/10.4028/www.scientific.net/MSF.858.790

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37

journal article EST / journal article ENG

Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide schottky diodesKozlovski, Vitali V.; Korolkov, Oleg; Davydovskaya, Klavdia S.; Lebedev, Alexander A.; Levinshteǐn, Michael E.; Sleptšuk, Natalja; Strel'Chuk, Anatolii M.; Toompuu, JanaTechnical Physics Letter2020 / p. 287 - 289 https://doi.org/10.1134/S1063785020030244 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

journal article EST / journal article ENG

38

journal article

Interpretation of some physical parameters of SiC Schottky interfaces manufactured by diffusion welding technologyRang, Toomas; Korolkov, Oleg; Ljutov, JevgeniProceedings of the Estonian Academy of Sciences. Engineering2004 / 3, p. 179-184

journal article

39

book article

Investigation of additional states in the silicon carbide surface after diffusion weldingMizsei, Janos; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasICSCRM2011 : Cleveland Ohio, USA, September 11-16, 2011 : abstracts2011 / p. 356 : ill https://www.researchgate.net/publication/269377410_Investigation_of_Additional_States_in_the_Silicon_Carbide_Surface_after_Diffusion_Welding

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40

book article

Investigation of deep level centers in i- and n-layers of GaAs pin-diodesToompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Rang, ToomasBEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia2014 / p. 25-28 : ill

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41

journal article

Investigation of p-i-n GaAs structures by DLTS methodToompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Rang, ToomasElektronika ir elektrotechnika = Electronics and electrical engineering2010 / 4, p. 51-54 : ill https://www.researchgate.net/publication/267372152_Investigation_of_p-i-n_GaAs_structures_by_DLTS_method

journal article

42

book article

Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials 20072009 / p. 647-650

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43

book article

Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials2007 / p. 100 https://www.scientific.net/MSF.600-603.647

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44

book article

Investigation of the combined stress and strain situation in diffusion welded rectifying elementsKorolkov, Oleg; Rang, Toomas; Kurel, RaidoSurface treatment VI2003 / p. 307-316 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/39/1441

book article

45

book article

Investigation of the graphene-on-silicon-carbide and CVD graphene as a basis for bioimpedance sensor applications : posterSleptšuk, Natalja; Land, Raul; Toompuu, Jana; Lebedev, Alexander A.; Davydov, Valery; Eliseyev, Ilya; Kalinina, Evgenia; Korolkov, Oleg; Rang, ToomasePosters2018 / 1 p.: ill https://cdn.technologynetworks.com/ep/pdfs/natalja-sleptsuk-a-raul-land-a-jana-toompuu-a-alexander-lebedev-b-valery-davydov-b-ilya-eliseyev-b.pdf

book article

46

dissertation

Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011 https://www.ester.ee/record=b2692547*est

dissertation

47

book article

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailAbstracts of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 303-304

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48

book article

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 890-893

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49

journal article

Large area 6H-SiC Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 155-159 : ill https://artiklid.elnet.ee/record=b1004045*est

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50

book article

Large area high quality interfaces to SiC substrates - technology and modellingRang, Toomas; Korolkov, Oleg; Kurel, Raido; Pikkov, MihhailMaterials mechanics, fracture mechanics, micro mechanics1999 / p. 574-579: ill

book article

Korolkov, Oleg (author)

types of item

author 41

CV 16

name of the person 5