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76
book article
Temperature effects in alloy metal and 6H-SiC substrate Schottky contacts caused by the current suppressing effect
Rang, Toomas
;
Blum, Alfons
Proceedings of the International Conference and Exhibition Micro Materials : MicroMat '97, April 16-18, 1997, Berlin, Germany
1997
/
p. 591-596
book article
77
book article
The basic Schottky parameters for combined diffusion welded and sputter metal contacts
Kuznetsova, Natalja
;
Korolkov, Oleg
;
Rang, Toomas
;
Pikkov, Mihhail
BEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference
2006
/
p. 47-50 : ill
book article
78
book article
The measurement and tuning of SiC diode voltage doubler represented as diffusion-welded stack [Online resource]
Toompuu, Jana
;
Sleptšuk, Natalja
;
Land, Raul
;
Korolkov, Oleg
;
Rang, Toomas
BEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 2018
2018
/
4 p.: ill
https://doi.org/10.1109/BEC.2018.8600963
book article
79
journal article
The specificity of solid-phase interaction of aluminium with silicon carbide in the manufacture of diffusion-welded contacts to semiconductor devices
Sleptšuk, Natalja
;
Korolkov, Oleg
;
Toompuu, Jana
;
Rang, Toomas
;
Mikli, Valdek
Elektronika ir elektrotechnika = Electronics and electrical engineering
2012
/
p. 45-48 : ill
https://eejournal.ktu.lt/index.php/elt/article/view/2610
journal article
80
book article
Thermopower measurements in 4H-SiC and Theoretical calculations considering the phonon drag effect
Grivickas, V.
;
Stölzer, M.
;
Velmre, Enn
;
Udal, Andres
;
Grivickas, P.
;
Syväjärvi, M.
;
Yakimova, R.
;
Bikbajevas, V.
Abstracts of the 3rd European Conference on Silicon Carbide and Related Materials : ECSCRM'2000 : Sept. 3-7, 2000, Kloster Banz, Germany
2000
/
p. 144
book article
81
book article
Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrate
Rang, Toomas
;
Blum, Alfons
Proceedings of the ELECTROSOFT 96, May 28-30, San-Miniato, Italy
1996
/
p. 347-356
book article
82
journal article
Исследование p-n-переходов на основе 4H-SiC, изготовленных имплантацией бора, методом нестационарной емкостной спектроскопии
Ivanov, Pavel
;
Potapov, Alexander
;
Samsonova, Tatyana
;
Korolkov, Oleg
;
Sleptšuk, Natalja
Физика и техника полупроводников
2011
/
с. 1358-1362 : ил
journal article
83
journal article
Низкотемпературный отжиг слаболегированных слоев n-4H-SiC после облучения быстрыми электронами
Korolkov, Oleg
;
Kozlovski, Vitali
;
Lebedev, Alexander
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Rang, Toomas
Физика и техника полупроводников
2019
/
с. 991-994
https://doi.org/10.21883/FTP.2019.07.47879.9089
journal article
Number of records 83, displaying
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