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76

book article

Polytypic heterojunctions for wide bandgap semiconductor materialsShenkin, Mikhail; Korolkov, Oleg; Rang, Toomas; Rang, GalinaMaterials characterization VII2015 / p. 273-282 : ill

book article

77

book article

Preliminary approach to the timing measurements for reverse recovery applied to the SiC Schottky diode modelPikkov, MihhailThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. 321-322 : ill

book article

78

book article

Preliminary investigation of diffusion welded contacts to p-type 6H-SiCKorolkov, Oleg; Rang, Toomas; Kuznetsova, Natalja; Ruut, JanaBEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia2002 / p. 55-56 : ill

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79

book article

Ränikarbiidil põhinevate jõupooljuhtseadiste disain ja karakteriseerimineRang, Toomas; Rang, GalinaTeadusmõte Eestis. 4, Tehnikateadused. 22007 / lk. 121-131 : ill

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80

book article

Self-Propagating High-Temperature Synthesis of Silicon Carbide Using Reactions Thermokinetic Coupling ApproachAmirkhanyan, Narine; Kirakosyan, Hasmik; Zakaryan, Marieta; Zurnachyan, Alina; Aydinyan, SofiyaEC-SILICONF2 : The 2nd European Conference on Silicon and Silica Based Materials, Hungary, October 4-8, 20212021 / p. 118

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81

book article

SiC Schottky diode for use in power convertorsPikkov, Mihhail; Rang, Toomas; Pokatilov, AndreiBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 245-246 : ill

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82

book article

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, Toomas11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 42

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83

book article

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697

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84

journal article

SiC и GaAs диоды в устройствах силовой электроникиBlinov, Andrei; Vinnikov, Dmitri; Rang, ToomasТехнiчна електродинамiка : тематичний випуск : силова електрониiка та енергоефективнiсть2012 / с. 42-46 : ил

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85

book article

Silicon carbide - new challenge for power semiconductor devicesRang, Toomas; Rang, Galina2nd International Symposium "Topical Problems of Education in the Field of Electrical and Power Engineering" : Kuressaare, Estonia, January 17-22, 20052005 / p. 36-42 : ill

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86

book article EST / book article ENG

Simulations of heterostructures based on 3C-4H and 6H-4H silicon carbide polytypesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 302-305 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.302 Conference Proceedings at Scopus Article at Scopus

book article EST / book article ENG

87

journal article EST / journal article ENG

Sintering of silicon carbide obtained by combustion synthesisAmirkhanyan, Narine; Kirakosyan, Hasmik; Zakaryan, Marieta; Zurnachyan, Alina; Rodriguez, Miguel Angel; Abovyan, L.; Aydinyan, SofiyaCeramics international2023 / p. 26129-26134 https://doi.org/10.1016/j.ceramint.2023.04.233 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

journal article EST / journal article ENG

88

book article

Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbideKorolkov, Oleg; Rang, ToomasSilicon Carbide and Related Materials 2001 : ICSCRM2001 : proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28 - November 2, 2001. Part 22002 / p. 941-944 : ill

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89

book article

Some of comparative properties of diffusion welded contacts to 6H- and 4H-silicon carbideKorolkov, Oleg; Rang, ToomasInternational Conference on Silicon Carbide and Related Materials 2001 - ICSCRM2001 - October 28-November 2, 2001 (Epochal Tsukuba, Ibaraki, Japan) : technical digest2001 / p. 625-626 : ill https://www.researchgate.net/publication/250340293_Some_Comparative_Properties_of_Diffusion-Welded_Contacts_to_6H_and_4H_Silicon_Carbide

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90

book article

Static and dynamic behavior of the SiC complementary JBS structuresKurel, Raido; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 59-62 : ill

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91

journal article EST / journal article ENG

ZrC-TiC-MoSi2 ceramic composite by spark plasma sinteringHussainova, Irina; Minasyan, Tatevik; Liu, Le; Aydinyan, SofiyaJournal of Physics: Conference Series2020 / art. 012028 https://doi.org/10.1088/1742-6596/1527/1/012028 Conference Proceedings at Scopus Article at Scopus Article at WOS

journal article EST / journal article ENG

92

book article

Temperature effects in alloy metal and 6H-SiC substrate Schottky contacts caused by the current suppressing effectRang, Toomas; Blum, AlfonsProceedings of the International Conference and Exhibition Micro Materials : MicroMat '97, April 16-18, 1997, Berlin, Germany1997 / p. 591-596

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93

book article

The basic Schottky parameters for combined diffusion welded and sputter metal contactsKuznetsova, Natalja; Korolkov, Oleg; Rang, Toomas; Pikkov, MihhailBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 47-50 : ill

book article

94

book article

The measurement and tuning of SiC diode voltage doubler represented as diffusion-welded stack [Online resource]Toompuu, Jana; Sleptšuk, Natalja; Land, Raul; Korolkov, Oleg; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600963

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95

journal article

The specificity of solid-phase interaction of aluminium with silicon carbide in the manufacture of diffusion-welded contacts to semiconductor devicesSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas; Mikli, ValdekElektronika ir elektrotechnika = Electronics and electrical engineering2012 / p. 45-48 : ill https://eejournal.ktu.lt/index.php/elt/article/view/2610

journal article

96

book article

Thermopower measurements in 4H-SiC and theoretical calculations considering the phonon drag effectGrivickas, V.; Stölzer, M.; Velmre, Enn; Udal, Andres; Grivickas, P.; Syväjärvi, M.; Yakimova, R.; Bikbajevas, V.Silicon Carbide and Related Materials : ECSCRM2000 : proceedings of the 3rd European Conference on Silicon Carbide and Related Materials : Kloster Banz, Germany, September 20002001 / p. 491-494 : ill https://www.researchgate.net/publication/240833914_Thermopower_Measurements_in_4H-SiC_and_Theoretical_Calculations_Considering_the_Phonon_Drag_Effect

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97

book article

Thermopower measurements in 4H-SiC and Theoretical calculations considering the phonon drag effectGrivickas, V.; Stölzer, M.; Velmre, Enn; Udal, Andres; Grivickas, P.; Syväjärvi, M.; Yakimova, R.; Bikbajevas, V.Abstracts of the 3rd European Conference on Silicon Carbide and Related Materials : ECSCRM'2000 : Sept. 3-7, 2000, Kloster Banz, Germany2000 / p. 144

book article

98

book article

Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrateRang, Toomas; Blum, AlfonsProceedings of the ELECTROSOFT 96, May 28-30, San-Miniato, Italy1996 / p. 347-356

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99

book article

Two-dimensional nonisothermal analysis of the current crowding effect at nonuniform SiC Schottky contacts using device simulator DYNAMIT-2DTKurel, Raido; Udal, AndresBEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia2002 / p. 51-54 : ill

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100

journal article

Исследование p-n-переходов на основе 4H-SiC, изготовленных имплантацией бора, методом нестационарной емкостной спектроскопииIvanov, Pavel; Potapov, Alexander; Samsonova, Tatyana; Korolkov, Oleg; Sleptšuk, NataljaФизика и техника полупроводников2011 / с. 1358-1362 : ил

journal article

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