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51
book article
Investigation of subcontact layers in SiC after diffusion welding
Korolkov, Oleg
;
Kuznetsova, Natalja
;
Sitnikova, A.
;
Viljus, Mart
;
Rang, Toomas
Silicon carbide and related materials 2007
2009
/
p. 647-650
book article
52
dissertation
Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimine
Sleptšuk, Natalja
2011
https://www.ester.ee/record=b2692547*est
dissertation
53
book article
Large area 4H-SiC power Schottky diode
Rang, Toomas
;
Korolkov, Oleg
;
Pikkov, Mihhail
Abstracts of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany
2000
/
p. 303-304
book article
54
book article
Large area 4H-SiC power Schottky diode
Rang, Toomas
;
Korolkov, Oleg
;
Pikkov, Mihhail
Proceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany
2000
/
p. 890-893
book article
55
journal article
Large area 6H-SiC Schottky diode
Rang, Toomas
;
Korolkov, Oleg
;
Pikkov, Mihhail
Proceedings of the Estonian Academy of Sciences. Engineering
2000
/
2, p. 155-159 : ill
https://artiklid.elnet.ee/record=b1004045*est
journal article
56
journal article
Leakage currents in 4H-SiC JBS diodes
Ivanov, Pavel
;
Korolkov, Oleg
;
Sleptšuk, Natalja
Semiconductors
2012
/
p. 397-400 : ill
https://link.springer.com/article/10.1134/S106378261203013X
journal article
57
journal article EST
/
journal article ENG
Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electrons
Korolkov, Oleg
;
Kozlovski, Vitali V.
;
Lebedev, Alexander A.
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Rang, Toomas
Semiconductors
2019
/
p. 975−978
https://doi.org/10.1134/S1063782619070133
Journal metrics at Scopus
Article at Scopus
Journal metrics at WOS
Article at WOS
journal article EST
/
journal article ENG
58
journal article EST
/
journal article ENG
Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-well light emitting diode using diffusion bonding technique
Rashid, Muhammad Haroon
;
Koel, Ants
;
Rang, Toomas
Micromachines
2021
/
art. 1499
https://doi.org/10.3390/mi12121499
Journal metrics at Scopus
Article at Scopus
Journal metrics at WOS
Article at WOS
journal article EST
/
journal article ENG
59
journal article
Modelling of charge carrier non-isothermal transport in silicon and silicon carbide
Velmre, Enn
;
Udal, Andres
Proceedings of the Estonian Academy of Sciences. Engineering
2000
/
2, p. 144-154 : ill
https://artiklid.elnet.ee/record=b1004044*est
journal article
60
book article
Modelling of inhomogeneities of SiC Schottky interfaces
Rang, Toomas
Software for Electrical Engineering Analysis and Design V : [Fifth International Conference ... : Electrosoft V]
2001
/
p. 3-15 : ill
https://www.witpress.com/Secure/elibrary/papers/ES01/ES01000FU.pdf
book article
61
book article EST
/
book article ENG
Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodes
Rashid, Muhammad Haroon
;
Koel, Ants
;
Rang, Toomas
Silicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019
2020
/
p. 490-496
https://doi.org/10.4028/www.scientific.net/MSF.1004.490
Conference proceedings at Scopus
Article at Scopus
book article EST
/
book article ENG
62
book article EST
/
book article ENG
Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodes
Rashid, Muhammad Haroon
;
Koel, Ants
;
Rang, Toomas
Silicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
2019
/
p. 357–361
https://doi.org/10.4028/www.scientific.net/MSF.963.357
Conference proceeding at Scopus
Article at Scopus
book article EST
/
book article ENG
63
book article
Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbide
Rashid, Muhammad Haroon
;
Koel, Ants
;
Rang, Toomas
;
Gähwiler, Reto
;
Grosberg, Martin
;
Jõemaa, Rauno
Materials and contact characterisation VIII
2017
/
p. 235-248 : ill
http://dx.doi.org/10.2495/MC170241
book article
64
book article
Non-destructive eddy current measurments for silicon carbide heterostructure analysis
Sahakyan, Armen
;
Koel, Ants
;
Rang, Toomas
Materials and contact characterisation VIII
2017
/
p. 49-60 : ill
http://dx.doi.org/10.2495/MC170061
book article
65
book article
Numerical analysis of the influence of deep energy level traps in SiC Schottky structures
Koel, Ants
;
Rang, Toomas
;
Rang, Galina
High performance structure and materials. VI
2012
/
p. 439-448 : ill
book article
66
book article
Numerical investigation of SiC devices performance considering the incomplecte dopant ionization
Velmre, Enn
;
Udal, Andres
Silicon carbide and related materials 2005
2006
/
p. 1383-1386
https://www.scientific.net/MSF.527-529.1383
book article
67
book article
Numerical simulation of P-type Al/4H-SiC Schottky barrier diodes [Online resource]
Ziko, Mehadi Hasan
;
Koel, Ants
;
Rang, Toomas
BEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 2018
2018
/
4 p.: ill
https://doi.org/10.1109/BEC.2018.8600976
book article
68
book article
Numerical simulations of wideband SiC N-N heterostructure diode
Patankar, Udayan Sunil
;
Koel, Ants
;
Pardy, Tamas
LAEDC 2020 : Latin American Electron Devices Conference, San José, Costa Rica, February 25-28, 2020
2020
/
4 p
https://doi.org/10.1109/LAEDC49063.2020.9073489
book article
69
book article
Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiers
Rang, Toomas
;
Higelin, G.
;
Kurel, Raido
Silicon Carbide and Related Materials 2003
2004
/
p. 1045-1048
https://www.scientific.net/MSF.457-460.1045
book article
70
journal article
Oxidation-abrasion of TiC-based cermets in SiC medium
Antonov, Maksim
;
Hussainova, Irina
;
Kübarsepp, Jakob
;
Traksmaa, Rainer
Wear
2011
/
p. 23-31 : ill
journal article
71
book article
Parametric simulation of SiC Schottky JBC structures
Rang, Toomas
;
Kurel, Raido
Computer methods and experimental measurements for surface effects and contact mechanics VIII
2007
/
p. 315-334
https://www.witpress.com/Secure/elibrary/papers/SECM07/SECM07030FU1.pdf
book article
72
book article
Polytypic heterojunctions for wide bandgap semiconductor materials
Shenkin, Mikhail
;
Korolkov, Oleg
;
Rang, Toomas
;
Rang, Galina
Materials characterization VII
2015
/
p. 273-282 : ill
book article
73
book article
Ränikarbiidil põhinevate jõupooljuhtseadiste disain ja karakteriseerimine
Rang, Toomas
;
Rang, Galina
Teadusmõte Eestis. 4, Tehnikateadused. 2
2007
/
lk. 121-131 : ill
book article
74
book article
Self-Propagating High-Temperature Synthesis of Silicon Carbide Using Reactions Thermokinetic Coupling Approach
Amirkhanyan, Narine
;
Kirakosyan, Hasmik
;
Zakaryan, Marieta
;
Zurnachyan, Alina
;
Aydinyan, Sofiya
EC-SILICONF2 : The 2nd European Conference on Silicon and Silica Based Materials, Hungary, October 4-8, 2021
2021
/
p. 118
book article
75
book article
SiC Schottky diode for use in power convertors
Pikkov, Mihhail
;
Rang, Toomas
;
Pokatilov, Andrei
BEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference
2006
/
p. 245-246 : ill
book article
Number of records 94, displaying
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