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artikkel ajakirjas

Impurity interaction with point defects in the Si-SiO2 structures and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, T.; Ugaste, Ülo; Laas, Tõnu; Heinmaa, I.; Medvid, A.Materials science and engineering : B2006 / p. 222-226 : ill https://www.sciencedirect.com/science/article/pii/S0921510706004375

artikkel ajakirjas

2

artikkel ajakirjas

Influence of point defects on physical qualities of semiconductorsAltosaar, Mare; Buschmann, Felix; Erm, Ants; Krustok, Jüri; Kukk, Peeter-Enn; Lõo, A.; Mädasson, Jaan; Tomson, A.Journal of materials and product. technology1991

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3

artikkel ajakirjas

Interaction between point defects in the Si-Si=2 systemKropman, Daniel; Kärner, T.; Samoson, Ago; Heinmaa, I.; Mellikov, EnnNuclear instruments & methods in physics research. Section B2002 / p. 78-82 https://www.sciencedirect.com/science/article/pii/S0168583X0100862X

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4

artikkel kogumikus

Interaction between point defects in the Si-SiO2 system during the process of its formationKropman, Daniel; Kärner, T.; Samoson, Ago; Heidmaa, I.; Ugaste, Ülo; Mellikov, EnnDefect and Diffusion Forum2001 / p. 1737-1744 https://www.sciencedirect.com/science/article/abs/pii/S0168583X0100862X

artikkel kogumikus

5

artikkel ajakirjas

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, Tiit; Heinmaa, Ivo; Laas, Tõnu; Londos, Charalampos; Misiuk, AndrzejSolid state phenomena2011 / p. 263-266 https://www.sciencedirect.com/science/article/pii/S0040609009014564

artikkel ajakirjas

6

artikkel ajakirjas

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Kärner, Tiit; Dolgov, Sergei; Heinmaa, Ivo; Laas, Tõnu; Londos, CharalamposPhysica status solidi (c)2011 / p. 694-696 : ill https://www.sciencedirect.com/science/article/pii/S0040609009014564

artikkel ajakirjas

7

artikkel kogumikus

Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system propertiesKropman, Daniel; Arbu, Uno; Kärner, T.; Ugaste, Ülo; Mellikov, Enn; Kauk, Marit; Heinmaa, I.; Samoson, Ago; Medvid, A.Gettering and defect engineering in semiconductor technology. XI2005 / p. 333-338 : ill https://www.researchgate.net/publication/243760197_Point_Defects_Interaction_with_Extended_Defects_and_Impurities_and_Its_Influence_on_the_Si-SiO_2_System_Properties

artikkel kogumikus

8

artikkel kogumikus

Point defects interaction with extended defects in the Si-SiO2 system [Electronic resource]Kropman, Daniel; Kärner, T.; Abru, Uno; Ugaste, Ülo; Mellikov, EnnProceedings IVC-16 : Venice, 20042004 / p. SS1-TuP394 [CD-ROM] https://www.researchgate.net/publication/243760197_Point_Defects_Interaction_with_Extended_Defects_and_Impurities_and_Its_Influence_on_the_Si-SiO_2_System_Properties

artikkel kogumikus

9

artikkel ajakirjas

Solid electrolytes for fluoride ion batteries : ionic conductivity in polycrystalline tysonite-type fluoridesRongeat, Carine; Reddy, M. Anji; Witter, Raiker; Fichtner, MaximilianACS applied materials and interfaces ACS applied materials & interfaces2014 / p. 2103-2110 : ill http://dx.doi.org/10.1021/am4052188

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dissertatsioon

Точечные дефекты и процессы их образования в сульфидах кадмия и цинка : автореферат ... кандидата химических наук (02.00.04)Mädasson, Jaan vt.ka Raudoja, Jaan1987 https://www.ester.ee/record=b1521477*est

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