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1

artikkel kogumikus

A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiCVelmre, Enn; Udal, AndresAbstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA1999 / paper no 395, 2 p https://www.researchgate.net/publication/250338907_A_Theoretical_Study_of_Electron_Drift_Mobility_Anisotropy_in_n-Type_4H-and_6H-SiC

artikkel kogumikus

2

artikkel kogumikus

A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiCVelmre, Enn; Udal, AndresProceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 12000 / p. 725-728

artikkel kogumikus

3

artikkel kogumikus

Ambient temperature influence on current suppressing effect caused by self-heating phenomenon at 6H-SiC Schottky interfacesKurel, Raido; Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 253-254: ill

artikkel kogumikus

4

artikkel ajakirjas

An analysis of critical parameters of SiC JBS structuresKurel, Raido; Rang, Toomas; Poirier, LaurentProceedings of the Estonian Academy of Sciences. Engineering2006 / 3-2, p. 284-299 : ill

artikkel ajakirjas

5

artikkel kogumikus

An experimental study of diffusion welded contacts to p-type silicon carbideKorolkov, OlegTelekommunikatsioon 2002 : IX rahvusvahelise telekommunikatsioonipäeva materjalid2002 / lk. 21-23 : ill

artikkel kogumikus

6

artikkel kogumikus EST / artikkel kogumikus ENG

Analysis of barrier inhomogeneities of P-type Al/4H-SiC Schottky barrier diodesZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Toompuu, JanaSilicon Carbide and Related Materials 2019 : Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan Materials science forum2020 / p. 960-972 https://doi.org/10.4028/www.scientific.net/MSF.1004.960 Conference proceedings at Scopus Article at Scopus

artikkel kogumikus EST / artikkel kogumikus ENG

7

artikkel kogumikus

Analysis of the basic Schottky parameters for diffusion-welded aluminium contacts to p- and n-type SiCKorolkov, Oleg; Ljutov, Jevgeni; Kuznetsova, Natalja; Ruut, Jana; Rang, ToomasBEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 / p. 51-53 : ill

artikkel kogumikus

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artikkel kogumikus EST / artikkel kogumikus ENG

Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealingKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, Natalja; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 734-737 https://doi.org/10.4028/www.scientific.net/MSF.963.734 Conference proceeding at Scopus Article at Scopus

artikkel kogumikus EST / artikkel kogumikus ENG

9

dissertatsioon

Characterization of Interfaces Between the Metal Film and Silicon Carbide Semiconductor = Metallkontakti ja ränikarbiidi vahelise liidespinna karakteriseerimineZiko, Mehadi Hasan2021 https://digikogu.taltech.ee/et/Item/34be534c-63e8-4013-b271-eaf1a7cb22e7 https://www.ester.ee/record=b5471196*est https://doi.org/10.23658/taltech.52/2021

dissertatsioon

10

dissertatsioon

Characterization of silicon carbide (SiC) and graphene-based novel semiconductor devices = Ränikarbiidil (SiC) ja grafeenil pōhinevate uudsete pooljuhtstruktuuride karakteriseerimineRashid, Muhammad Haroon2021 https://www.ester.ee/record=b5397240*est https://digikogu.taltech.ee/et/Item/a64fd50e-125c-49ad-b0a6-6ad2e01b8bfa https://doi.org/10.23658/taltech.6/2021

dissertatsioon

11

artikkel kogumikus

Charge carrier transport in SiC Schottky interfaces : shape factor approachKurel, Raido; Rang, Toomas; Rang, Galina; Kasemaa, ArgoBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 87-90 : ill

artikkel kogumikus

12

artikkel kogumikus

Clamp mode package diffusion welded power SiC Schottky diodesKorolkov, Oleg; Kuznetsova, Natalja; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 55-58 : ill

artikkel kogumikus

13

artikkel kogumikus

Combustion synthesis of nanoscale boron and silicon carbidesZakaryan, Marieta; Amirkhanyan, Narine; Kirakosyan, Hasmik; Zurnachyan, Alina; Aydinyan, SofiyaCIMTEC 2022 : 15th International Ceramics Congress (June 20-24) CIMTEC 2022 : 9th Forum on New Materials (June 25-29)2022 http://2022.cimtec-congress.org/focused-session-ca-11_1

artikkel kogumikus

14

artikkel ajakirjas

Comparative characteristics of 6H- and 4H-SiC surfaces in diffusion weldingKorolkov, Oleg; Rang, ToomasProceedings of the Estonian Academy of Sciences. Engineering2001 / 4, p. 347-353 : ill

artikkel ajakirjas

15

artikkel kogumikus

Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodesSleptšuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 39-42 : ill http://www.ester.ee/record=b2150914*est

artikkel kogumikus

16

artikkel kogumikus

Comparison of individual SiC JBS chips and JBS stacks connected in series by diffusion weldingSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, ToomasBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 81-84 : ill

artikkel kogumikus

17

artikkel kogumikus

Comparison of Schottky parameters for diffusion-welded and sputter contacts to silicon carbideKuznetsova, NataljaInfo- ja kommunikatsioonitehnoloogia doktorikooli IKTDK teise aastakonverentsi artiklite kogumik : 11.-12. mai 2007, Viinistu kunstimuuseum2007 / lk. 162-165 : ill

artikkel kogumikus

18

artikkel kogumikus

Comparison of Si and SiC devices surge current capability by means of numerical simulationsVelmre, Enn; Udal, AndresBEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedings1996 / p. 77-80: ill

artikkel kogumikus

19

artikkel ajakirjas

Comparison of the dynamic behaviour of complementary 6H- and 4H-SiC Schottky structures using numerical simulationRang, Toomas; Kurel, RaidoProceedings of the Estonian Academy of Sciences. Engineering2004 / 3, p. 173-178

artikkel ajakirjas

20

artikkel kogumikus

Complementary multi guard ring JBS structures: numerical analysisKoel, Ants; Rang, Toomas; Rang, GalinaBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 85-88 : ill

artikkel kogumikus

21

artikkel kogumikus

Contact manufacturing technologies for wide band-gap semiconductor materials (invited)Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 17-28: ill

artikkel kogumikus

22

artikkel kogumikus

Corrected accounting of electron-hole scattering in cross-term current equations for Si and SiCVelmre, Enn; Udal, Andres18th Nordic Semiconductor Meeting, Linköping, June 7-10, 1998 : abstracts1998 / p. F-88: ill https://iopscience.iop.org/article/10.1238/Physica.Topical.079a00193

artikkel kogumikus

23

artikkel ajakirjas

Corrected accounting of electron-hole scattering in cross-term current equations for Si and SiCVelmre, Enn; Udal, AndresPhysica scripta1999 / Proceedings of 18th Nordic Semiconductor Meeting, Linköping, Sweden, June 7-10, 1998, ISBN 91-87308-71-1, p. 193-197: ill https://ui.adsabs.harvard.edu/abs/1999PhST...79..193V/abstract

artikkel ajakirjas

24

artikkel kogumikus

Current crowding phenomenon in JBC structuresRang, Toomas; Kurel, Raido; Higelin, G.; Poirier, LaurentComputer Methods and Experimental Measurements for Surface Effects and Contact Mechanics VII2005 / p. 387-396 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/49/15383

artikkel kogumikus

25

artikkel kogumikus

Current suppressing effect in alloy metal and 6H-SiC substrate Schottky contactsRang, Toomas; Blum, AlfonsBEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedings1996 / p. 81-84: ill

artikkel kogumikus

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