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1
A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC
Velmre, Enn
;
Udal, Andres
Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1
2000
/
p. 725-728
artikkel kogumikus
2
Characterization of Interfaces Between the Metal Film and Silicon Carbide Semiconductor = Metallkontakti ja ränikarbiidi vahelise liidespinna karakteriseerimine
Ziko, Mehadi Hasan
2021
https://digikogu.taltech.ee/et/Item/34be534c-63e8-4013-b271-eaf1a7cb22e7
https://www.ester.ee/record=b5471196*est
dissertatsioon
3
Characterization of silicon carbide (SiC) and graphene-based novel semiconductor devices = Ränikarbiidil (SiC) ja grafeenil pōhinevate uudsete pooljuhtstruktuuride karakteriseerimine
Rashid, Muhammad Haroon
2021
https://www.ester.ee/record=b5397240*est
https://digikogu.taltech.ee/et/Item/a64fd50e-125c-49ad-b0a6-6ad2e01b8bfa
dissertatsioon
4
Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodes
Sleptšuk, Natalja
;
Korolkov, Oleg
;
Land, Raul
;
Toompuu, Jana
;
Annus, Paul
;
Rang, Toomas
BEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia
2016
/
p. 39-42 : ill
http://www.ester.ee/record=b2150914*est
artikkel kogumikus
5
Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons
Lebedev, Alexander A.
;
Davidovskaja, Klavdia
;
Kozlovski, Vitali V.
;
Korolkov, Oleg
;
Sleptšuk, Natalja
;
Toompuu, Jana
Silicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
2017
/
p. 447-450 : ill
https://doi.org/10.4028/www.scientific.net/MSF.897.447
artikkel kogumikus
6
Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons
Lebedev, Alexander A.
;
Davydovskaja, K. S.
;
Kozlovski, Vitali V.
;
Korolkov, Oleg
;
Sleptšuk, Natalja
;
Toompuu, Jana
11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]
2016
/
p. 49
artikkel kogumikus
7
Diffusion welding contacts to 6H-SiC substrates
Korolkov, Oleg
;
Rang, Toomas
43. Internationales Wissenschaftliches Kolloquium, 21.-24.09.1998
1998
/
p. 47-48
artikkel kogumikus
8
Effect of milling time on dual-nanoparticulate-reinforced aluminum alloy matrix composite materials
Kwon, Hansang
;
Saarna, Mart
;
Yoon, Songhak
;
Weidenkaff, Anke
;
Leparoux, Marc
Materials science and engineering : A
2014
/
p. 338-345
https://doi.org/10.1016/j.msea.2013.10.046
artikkel ajakirjas
9
Feasibility study of Si and SiC MOSFETs in high-gain DC/DC converter for renewable energy applications
Blinov, Andrei
;
Chub, Andrii
;
Vinnikov, Dmitri
;
Rang, Toomas
Proceedings : IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society : Austria Center Vienna, Vienna, Austria, 10-14 November, 2013
2013
/
p. 5975-5978 : ill
artikkel kogumikus
10
Formation of Diffusion welded Al contacts to semiconductor silicon carbide
Korolkov, Oleg
2004
dissertatsioon
11
High voltage diffusion‐welded stacks on the basis of SiC Schottky diodes
Korolkov, Oleg
;
Rang, Toomas
;
Sleptšuk, Natalja
;
Annus, Paul
;
Land, Raul
ICSRM 2015 : program guide
2015
/
p. 73
artikkel kogumikus
12
High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules
Colmenares, Juan
;
Peftitsis, Dimosthenis
;
Rabkowski, Jacek
IEEE transactions on industry applications
2015
/
p. 4664-4676 : ill
http://dx.doi.org/10.1109/TIA.2015.2456422
artikkel ajakirjas
13
High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodes
Korolkov, Oleg
;
Sleptšuk, Natalja
;
Annus, Paul
;
Land, Raul
;
Rang, Toomas
Silicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
2016
/
p. 790-794 : ill
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.790
artikkel kogumikus
14
Interfaces to 6H-SiC substrates - technology and simulation
Rang, Toomas
;
Blum, Alfons
Proceedings of the Estonian Academy of Sciences. Engineering
1997
/
4, p. 250-259: ill
artikkel ajakirjas
15
Investigation of electrical characteristics of SiC based complementary JBS structures
Kurel, Raido
2005
https://www.ester.ee/record=b2053292*est
dissertatsioon
16
Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimine
Sleptšuk, Natalja
2011
https://www.ester.ee/record=b2692547*est
dissertatsioon
17
Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-Well light emitting diode using diffusion bonding technique
Rashid, Muhammad Haroon
;
Koel, Ants
;
Rang, Toomas
Micromachines
2021
/
art. 1499
https://doi.org/10.3390/mi12121499
artikkel ajakirjas
18
Modelling of charge carrier non-isothermal transport in silicon and silicon carbide
Velmre, Enn
;
Udal, Andres
Proceedings of the Estonian Academy of Sciences. Engineering
2000
/
2, p. 144-154 : ill
artikkel ajakirjas
19
Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodes
Rashid, Muhammad Haroon
;
Koel, Ants
;
Rang, Toomas
Silicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
2019
/
p. 357–361
https://doi.org/10.4028/www.scientific.net/MSF.963.357
artikkel kogumikus
20
Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbide
Rashid, Muhammad Haroon
;
Koel, Ants
;
Rang, Toomas
;
Gähwiler, Reto
;
Grosberg, Martin
;
Jõemaa, Rauno
Materials and contact characterisation VIII
2017
/
p. 235-248 : ill
http://dx.doi.org/10.2495/MC170241
artikkel kogumikus
21
Non-destructive eddy current measurments for silicon carbide heterostructure analysis
Sahakyan, Armen
;
Koel, Ants
;
Rang, Toomas
Materials and contact characterisation VIII
2017
/
p. 49-60 : ill
http://dx.doi.org/10.2495/MC170061
artikkel kogumikus
22
Numerical analysis of the influence of deep energy level traps in SiC Schottky structures
Koel, Ants
;
Rang, Toomas
;
Rang, Galina
High performance structure and materials. VI
2012
/
p. 439-448 : ill
artikkel kogumikus
23
Oxidation-abrasion of TiC-based cermets in SiC medium
Antonov, Maksim
;
Hussainova, Irina
;
Kübarsepp, Jakob
;
Traksmaa, Rainer
Wear
2011
/
p. 23-31 : ill
artikkel ajakirjas
24
Polytypic heterojunctions for wide bandgap semiconductor materials
Shenkin, Mikhail
;
Korolkov, Oleg
;
Rang, Toomas
;
Rang, Galina
Materials characterization VII
2015
/
p. 273-282 : ill
artikkel kogumikus
25
Self-Propagating High-Temperature Synthesis of Silicon Carbide Using Reactions Thermokinetic Coupling Approach
Amirkhanyan, N.
;
Kirakosyan, Hasmik
;
Zakaryan, Marieta
;
Zurnachyan, A.
;
Aydinyan, Sofiya
EC-SILICONF2 : The 2nd European Conference on Silicon and Silica Based Materials, Hungary, October 4-8, 2021
2021
/
p. 118
www.ec-siliconf.eu/
artikkel kogumikus
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