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1

A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiCVelmre, Enn; Udal, AndresProceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 12000 / p. 725-728

artikkel kogumikus
2

Characterization of Interfaces Between the Metal Film and Silicon Carbide Semiconductor = Metallkontakti ja ränikarbiidi vahelise liidespinna karakteriseerimineZiko, Mehadi Hasan2021https://digikogu.taltech.ee/et/Item/34be534c-63e8-4013-b271-eaf1a7cb22e7 https://www.ester.ee/record=b5471196*est

dissertatsioon
3

Characterization of silicon carbide (SiC) and graphene-based novel semiconductor devices = Ränikarbiidil (SiC) ja grafeenil pōhinevate uudsete pooljuhtstruktuuride karakteriseerimineRashid, Muhammad Haroon2021https://www.ester.ee/record=b5397240*est https://digikogu.taltech.ee/et/Item/a64fd50e-125c-49ad-b0a6-6ad2e01b8bfa

dissertatsioon
4

Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodesSleptšuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 39-42 : illhttp://www.ester.ee/record=b2150914*est

artikkel kogumikus
5

Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electronsLebedev, Alexander A.; Davidovskaja, Klavdia; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, JanaSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 447-450 : illhttps://doi.org/10.4028/www.scientific.net/MSF.897.447

artikkel kogumikus
6

Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electronsLebedev, Alexander A.; Davydovskaja, K. S.; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 49

artikkel kogumikus
7

Diffusion welding contacts to 6H-SiC substratesKorolkov, Oleg; Rang, Toomas43. Internationales Wissenschaftliches Kolloquium, 21.-24.09.19981998 / p. 47-48

artikkel kogumikus
8

Effect of milling time on dual-nanoparticulate-reinforced aluminum alloy matrix composite materialsKwon, Hansang; Saarna, Mart; Yoon, Songhak; Weidenkaff, Anke; Leparoux, MarcMaterials science and engineering : A2014 / p. 338-345https://doi.org/10.1016/j.msea.2013.10.046

artikkel ajakirjas
9

Feasibility study of Si and SiC MOSFETs in high-gain DC/DC converter for renewable energy applicationsBlinov, Andrei; Chub, Andrii; Vinnikov, Dmitri; Rang, ToomasProceedings : IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society : Austria Center Vienna, Vienna, Austria, 10-14 November, 20132013 / p. 5975-5978 : ill

artikkel kogumikus
10

Formation of Diffusion welded Al contacts to semiconductor silicon carbideKorolkov, Oleg2004

dissertatsioon
11

High voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Rang, Toomas; Sleptšuk, Natalja; Annus, Paul; Land, RaulICSRM 2015 : program guide2015 / p. 73

artikkel kogumikus
12

High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modulesColmenares, Juan; Peftitsis, Dimosthenis; Rabkowski, JacekIEEE transactions on industry applications2015 / p. 4664-4676 : illhttp://dx.doi.org/10.1109/TIA.2015.2456422

artikkel ajakirjas
13

High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasSilicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy2016 / p. 790-794 : illhttp://dx.doi.org/10.4028/www.scientific.net/MSF.858.790

artikkel kogumikus
14

Interfaces to 6H-SiC substrates - technology and simulationRang, Toomas; Blum, AlfonsProceedings of the Estonian Academy of Sciences. Engineering1997 / 4, p. 250-259: ill

artikkel ajakirjas
15

Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005https://www.ester.ee/record=b2053292*est

dissertatsioon
16

Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011https://www.ester.ee/record=b2692547*est

dissertatsioon
17

Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-Well light emitting diode using diffusion bonding techniqueRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasMicromachines2021 / art. 1499https://doi.org/10.3390/mi12121499

artikkel ajakirjas
18

Modelling of charge carrier non-isothermal transport in silicon and silicon carbideVelmre, Enn; Udal, AndresProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 144-154 : ill

artikkel ajakirjas
19

Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 357–361https://doi.org/10.4028/www.scientific.net/MSF.963.357

artikkel kogumikus
20

Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbideRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Gähwiler, Reto; Grosberg, Martin; Jõemaa, RaunoMaterials and contact characterisation VIII2017 / p. 235-248 : illhttp://dx.doi.org/10.2495/MC170241

artikkel kogumikus
21

Non-destructive eddy current measurments for silicon carbide heterostructure analysisSahakyan, Armen; Koel, Ants; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 49-60 : illhttp://dx.doi.org/10.2495/MC170061

artikkel kogumikus
22

Numerical analysis of the influence of deep energy level traps in SiC Schottky structuresKoel, Ants; Rang, Toomas; Rang, GalinaHigh performance structure and materials. VI2012 / p. 439-448 : ill

artikkel kogumikus
23

Oxidation-abrasion of TiC-based cermets in SiC mediumAntonov, Maksim; Hussainova, Irina; Kübarsepp, Jakob; Traksmaa, RainerWear2011 / p. 23-31 : ill

artikkel ajakirjas
24

Polytypic heterojunctions for wide bandgap semiconductor materialsShenkin, Mikhail; Korolkov, Oleg; Rang, Toomas; Rang, GalinaMaterials characterization VII2015 / p. 273-282 : ill

artikkel kogumikus
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Self-Propagating High-Temperature Synthesis of Silicon Carbide Using Reactions Thermokinetic Coupling ApproachAmirkhanyan, N.; Kirakosyan, Hasmik; Zakaryan, Marieta; Zurnachyan, A.; Aydinyan, SofiyaEC-SILICONF2 : The 2nd European Conference on Silicon and Silica Based Materials, Hungary, October 4-8, 20212021 / p. 118www.ec-siliconf.eu/

artikkel kogumikus

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