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Achieving accuracy in charge carrier mobility modelling in siliconMnatsakanov, T.T.; Gresserov, B.N.; Pomortseva, L.I.Automation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University1992 / p. 89-94: ill

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AFM and SEM investigations of ion beam synthesized Mg2Si precipitates in Si substratesAngelov, Christo; Mikli, Valdek; Amov, Blagoj; Goranova, E.Journal of optoelectronics and advanced materials2005 / 1, p. 369-373 https://old.joam.inoe.ro/arhiva/pdf7_1/Angelov3.pdf

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Analyses of frequency dependencies of Q factor for planar inductors on siliconJankovskis, Janis; Yurshevich, Valentins; Rankis, GunarsBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 231-234

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artikkel ajakirjas EST / artikkel ajakirjas ENG

Band gap engineering by cationic substitution in Sn(Zr1−xTix)Se3 alloy for bottom sub-cell application in solar cellsKondrotas, Rokas; Pakstas, Vidas; Franckevicius, Marius; Suchodolskis, Arturas; Tumenas, Saulius; Jasinskas, Vidmantas; Juskenas, Remigijus; Krotkus, Arunas; Muska, Katri; Kauk-Kuusik, MaritJournal of materials chemistry A2023 / p. 26488–26498 : ill https://doi.org/10.1039/D3TA05550G Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

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Comparative ellipsometric and ion beam analytical studies on ion beam crystallized silicon implanted with Zn and Pb ionsLohner, Tivador; Angelov, Christo; Mikli, ValdekThin solid films2008 / 22, p. 8009-8012 https://www.sciencedirect.com/science/article/pii/S0040609008003660

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Corrected accounting of electron-hole scattering in cross-term current equations for Si and SiCVelmre, Enn; Udal, AndresPhysica scripta1999 / Proceedings of 18th Nordic Semiconductor Meeting, Linköping, Sweden, June 7-10, 1998, ISBN 91-87308-71-1, p. 193-197: ill https://ui.adsabs.harvard.edu/abs/1999PhST...79..193V/abstract

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Corrected accounting of electron-hole scattering in cross-term current equations for Si and SiCVelmre, Enn; Udal, Andres18th Nordic Semiconductor Meeting, Linköping, June 7-10, 1998 : abstracts1998 / p. F-88: ill https://iopscience.iop.org/article/10.1238/Physica.Topical.079a00193

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Correlation between the UV-reflectance spectra and the structure of poly-Si films obtained by aluminium induced crystallizationDimova-Malinovska, D.; Angelov, O.; Sendova-Vassileva, M.; Mikli, ValdekJournal of optoelectronics and advanced materials2009 / 9, p. 1079-1085 https://www.researchgate.net/publication/288122478_Correlation_between_the_UV-reflectance_spectra_and_the_structure_of_poly-Si_films_obtained_by_Aluminium_Induced_Crystallization

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Effect of calcium to silicon ratio on the microstructure of hydrated calcium silicate gels prepared under medium alkalinityBa, Haojing; Li, Jiajie; Ni, Wen; Li, Ying; Ju, Yongjian; Zhao, Ben; Wen, Guoping; Hitch, Michael WilliamConstruction and building materials2023 / art. 131240, 11 p.: ill https://doi.org/10.1016/j.conbuildmat.2023.131240

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Electrochemical deposition of thin polypyrrole films on silicon substratesIntelmann, Carl Matthias; Sõritski, Vitali; Tsankov, Dimiter; Hinrichs, Karsten; Rappich, Jörg5th ISE Spring Meeting : Dublin (Ireland), 01.-04.05.072007 / ? p

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Electrochemically deposited ultrathin polypyrrole films on siliconIntelmann, Carl Matthias; Sõritski, Vitali; Tsankov, Dimiter; Hinrichs, Karsten; Rappich, JörgGDCh (German Chemical Society) - YoungChemists : Spring Symposium 2007 : Chemnitz (Germany), 22.-24.03.072007 / ? p

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From virtual characterization to test-chips : DFM analysis through pattern enumerationMartins, Mayler G.A.; Pagliarini, Samuel Nascimento; Isgenc, Mehmet Meric; Pileggi, LarryIEEE transactions on computer-aided design of integrated circuits and systems2020 / p. 520-532 https://doi.org//10.1109/TCAD.2018.2889772

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High phonon-drag thermoelectric efficiency of SiC at low temperaturesVelmre, Enn; Udal, Andres; Grivickas, V.Final program of the 10th International Conference on SiC and Related Materials : ICSCRM'2003 : Lyon, France, Oct. 5-10, 20032003 / p. ThP4-13 https://www.researchgate.net/publication/240834700_High_Phonon-Drag_Thermoelectric_Efficiency_of_SiC_at_Low_Temperatures

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Hydrogen interaction with point defects in the Si-SiO2 structures and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, T.; Ugaste, Ülo; Laas, Tõnu; Heinmaa, I.; Abru, Uno; Medvid, A.Solid state phenomena2008 / p. 345-350 https://www.scientific.net/SSP.131-133.345

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Impurity interaction with point defects in the Si-SiO2 structures and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, T.; Ugaste, Ülo; Laas, Tõnu; Heinmaa, I.; Medvid, A.Materials science and engineering : B2006 / p. 222-226 : ill https://www.sciencedirect.com/science/article/pii/S0921510706004375

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Influence of excitonic scattering on charge carrier ambipolar diffusion in siliconUdal, Andres; Velmre, EnnESSDERC'97 : proceedings of the 27th European Solid-State Device Research Conference, Stuttgart, Germany, 22-24 September 19971997 / p. 212-215: ill

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Interaction between point defects in the Si-Si=2 systemKropman, Daniel; Kärner, T.; Samoson, Ago; Heinmaa, I.; Mellikov, EnnNuclear instruments & methods in physics research. Section B2002 / p. 78-82 https://www.sciencedirect.com/science/article/pii/S0168583X0100862X

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Interaction between point defects in the Si-SiO2 system during the process of its formationKropman, Daniel; Kärner, T.; Samoson, Ago; Heidmaa, I.; Ugaste, Ülo; Mellikov, EnnDefect and Diffusion Forum2001 / p. 1737-1744 https://www.sciencedirect.com/science/article/abs/pii/S0168583X0100862X

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Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, Tiit; Heinmaa, Ivo; Laas, Tõnu; Londos, Charalampos; Misiuk, AndrzejSolid state phenomena2011 / p. 263-266 https://www.sciencedirect.com/science/article/pii/S0040609009014564

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Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Kärner, Tiit; Dolgov, Sergei; Heinmaa, Ivo; Laas, Tõnu; Londos, CharalamposPhysica status solidi (c)2011 / p. 694-696 : ill https://www.sciencedirect.com/science/article/pii/S0040609009014564

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Jaan Raik: Computers must undergo a revolution in order to continue their rapid developmentRaik, JaanEstonian Centre of Excellence in ICT Research2021 / p. 43-47 : ill http://www.digar.ee/id/nlib-digar:634779 https://www.ester.ee/record=b5456158*est

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Jaan Raik: kiibidisain aitaks saada Eestil jõukaks tehnoloogiamaaksMaidla, Margusnovaator.err.ee2023

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Kassikuld võib osutuda elektroonikatööstuses kullast kallimaksKristmann, Katriinnovaator.err.ee2024 Kassikuld võib osutuda elektroonikatööstuses kullast kallimaks

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Keemia tee klaasist ränisse : tänavune Nobeli keemiaauhind seab õigluse jalule keemiateoreetikute ja arvutikeemikute hulgasStrandberg, MarekSirp2013 / lk. 26 https://www.sirp.ee/s1-artiklid/c21-teadus/2013-10-17-20-15-58-2/

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Kleenukesed päikeseelemendid aitaks vältida ränipaneele ootavat kriisiSibinski, Maciejnovaator.err.ee2024 Kleenukesed päikeseelemendid aitaks vältida ränipaneele ootavat kriisi

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