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journal article

Analysis of deep level centers in GaAs pin-diode structuresKorolkov, Oleg; Toompuu, Jana; Rang, ToomasElektronika ir elektrotechnika = Electronics and electrical engineering2013 / [4 p. ] : ill

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book article

Analysis of deep level spectrum in GaAs p+-p-i-n-n+ structuresToompuu, Jana; Sleptšuk, Natalja; Korolkov, Oleg; Rang, ToomasMaterials characterization VII2015 / p. 283-294 : ill

book article

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book article

Characterization of deep level traps in semiconductor structures using numerical experimentsKoel, Ants; Rang, Toomas; Rang, GalinaMaterials characterization VII2015 / p. 253-261 : ill

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dissertation

Characterization of Interfaces Between the Metal Film and Silicon Carbide Semiconductor = Metallkontakti ja ränikarbiidi vahelise liidespinna karakteriseerimineZiko, Mehadi Hasan2021 https://digikogu.taltech.ee/et/Item/34be534c-63e8-4013-b271-eaf1a7cb22e7 https://www.ester.ee/record=b5471196*est https://doi.org/10.23658/taltech.52/2021

dissertation

5

book article

Clamp mode package diffusion welded power SiC Schottky diodesKorolkov, Oleg; Kuznetsova, Natalja; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 55-58 : ill

book article

6

book article

Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodesSleptšuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 39-42 : ill http://www.ester.ee/record=b2150914*est

book article

7

book article

Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electronsLebedev, Alexander A.; Davidovskaja, Klavdia; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, JanaSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 447-450 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.447

book article

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journal article

Esimene sõprus takisti ja dioodigaSinivee, VeljoHorisont2008 / 1, lk. 47-49 : ill https://artiklid.elnet.ee/record=b2041444*est

journal article

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dissertation

Formation of Diffusion welded Al contacts to semiconductor silicon carbideKorolkov, Oleg2004

dissertation

10

book article

GaAs based diffusion welded high voltage diode stacks [Electronic resource]Toompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Voitovitš, Viktor; Rang, ToomasIEEE International Conference on Semiconductor Electronics CD-ROM Proceedings2010 / [4] p https://ieeexplore.ieee.org/document/5549505

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book article

High performance GaAs power diodesVoitovitš, Viktor; Rang, Toomas; Rang, Galina; Pikkov, MihhailBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 111-114 : ill

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book article

High voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasICSRM 2015 : program guide2015 / p. 73

book article

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book article EST / book article ENG

High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasSilicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy2016 / p. 790-794 : ill https://doi.org/10.4028/www.scientific.net/MSF.858.790 Conference Proceedings at Scopus Article at Scopus

book article EST / book article ENG

14

book article

Investigation of deep level centers in i- and n-layers of GaAs pin-diodesToompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Rang, ToomasBEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia2014 / p. 25-28 : ill

book article

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dissertation

Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005 https://www.ester.ee/record=b2053292*est

dissertation

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dissertation

Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011 https://www.ester.ee/record=b2692547*est

dissertation

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journal article

Large area 6H-SiC Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 155-159 : ill https://artiklid.elnet.ee/record=b1004045*est

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book article

Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p⁺-pin-n⁺ structures and result of analysisToompuu, Jana; Sleptšuk, Natalja; Korolkov, Oleg; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 35-38 : ill http://www.ester.ee/record=b2150914*est

book article

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journal article

Numerical analysis of forward-biased diode structures based on direct-gap semiconductorsVelmre, Enn; Freidin, BorisElectronics letters : an international publication1979 / p. 383-385 https://www.ester.ee/record=b2180432*est

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journal article

Numerical analysis of the on state of diode structures based on direct-gap semiconductorsVelmre, Enn; Freidin, Boris; Udal, AndresPhysica scripta : an international journal for experimental and theoretical physics1981 / p. 468-471 https://www.ester.ee/record=b2244094*est

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journal article

Numerical modeling of the electrothermal transient process in diode structures based on direct-cap-semiconductorsVelmre, Enn; Freidin, BorisPhysica status solidi. A, Applied research1983 / p. K131-K134 https://www.ester.ee/record=b1562026*est

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book article

Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiersRang, Toomas; Higelin, G.; Kurel, RaidoSilicon Carbide and Related Materials 20032004 / p. 1045-1048 https://www.scientific.net/MSF.457-460.1045

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journal article

Power diode transicent characteristics modeling in inductive load circuitsFreidin, Boris; Velmre, Enn; Udal, AndresThe Bug Exterminator (USA)1991 / 3, p. 1-5: fig

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book article EST / book article ENG

SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Toompuu, Jana; Sleptšuk, Natalja; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 862–865 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.862 Conference Proceedings at Scopus Article at Scopus

book article EST / book article ENG

25

book article

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697

book article

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