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Kropman, Daniel (author)

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journal article EST / journal article ENG

Effect of ultrasonic treatment on the defect structure of the Si-SiO2 systemKropman, Daniel; Seeman, Viktor; Dolgov, Sergei; Medvids, ArtursPhysica Status Solidi (C) Current Topics in Solid State Physics2016 / p. 793 - 797 https://doi.org/10.1002/pssc.201600052 Journal metrics at Scopus Article at Scopus Article at WOS

journal article EST / journal article ENG
2

journal article

Hydrogen interaction with point defects in the Si-SiO2 structures and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, T.; Ugaste, Ülo; Laas, Tõnu; Heinmaa, I.; Abru, Uno; Medvid, A.Solid state phenomena2008 / p. 345-350 https://www.scientific.net/SSP.131-133.345

journal article
3

journal article

Impurity interaction with point defects in the Si-SiO2 structures and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, T.; Ugaste, Ülo; Laas, Tõnu; Heinmaa, I.; Medvid, A.Materials science and engineering : B2006 / p. 222-226 : ill https://www.sciencedirect.com/science/article/pii/S0921510706004375

journal article
4

journal article

Interaction between point defects in the Si-Si=2 systemKropman, Daniel; Kärner, T.; Samoson, Ago; Heinmaa, I.; Mellikov, EnnNuclear instruments & methods in physics research. Section B2002 / p. 78-82 https://www.sciencedirect.com/science/article/pii/S0168583X0100862X

journal article
5

book article

Interaction between point defects in the Si-SiO2 system during the process of its formationKropman, Daniel; Kärner, T.; Samoson, Ago; Heidmaa, I.; Ugaste, Ülo; Mellikov, EnnDefect and Diffusion Forum2001 / p. 1737-1744 https://www.sciencedirect.com/science/article/abs/pii/S0168583X0100862X

book article
6

journal article

Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formationKropman, Daniel; Kärner, T.; Abru, Uno; Ugaste, Ülo; Mellikov, EnnThin solid films2004 / 1/2, p. 53-57 : ill https://www.sciencedirect.com/science/article/abs/pii/S0921510704003459

journal article
7

journal article

Interaction between point defects, extended defects and impurities in the Si-SiO2 system during the process of its formationKropman, Daniel; Kärner, T.; Abru, Uno; Ugaste, Ülo; Mellikov, Enn; Kauk, MaritMaterials science and engineering : B2004 / p. 295-298 : ill https://www.sciencedirect.com/science/article/abs/pii/S0921510704003459

journal article
8

journal article

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, Tiit; Heinmaa, Ivo; Laas, Tõnu; Londos, Charalampos; Misiuk, AndrzejSolid state phenomena2011 / p. 263-266 https://www.sciencedirect.com/science/article/pii/S0040609009014564

journal article
9

journal article

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Kärner, Tiit; Dolgov, Sergei; Heinmaa, Ivo; Laas, Tõnu; Londos, CharalamposPhysica status solidi (c)2011 / p. 694-696 : ill https://www.sciencedirect.com/science/article/pii/S0040609009014564

journal article
10

book article

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Kärner, Tiit; Dolgov, Sergei; Heinmaa, Ivo; Laas, Tõnu; Londos, C. A.The 9th International Conference on Global Research and Education : August 9-12, 2010, Riga : digest2010 / p. 231-233 https://www.sciencedirect.com/science/article/abs/pii/S0040609009014564

book article
11

book article

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interfaceKropman, Daniel; Mellikov, Enn; Lott, Kalju; Kärner, T.; Heinmaa, I.Getterring and defect engineering in semiconductor technology XIII : CADEST 2009 : proceedings of the XIIIth International Autumn Meeting, Döllnsee-Schorfheide, north of Berlin, Germany, September 26 - October 02, 20092010 / p. 145-148 : ill

book article
12

journal article

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interfaceKropman, Daniel; Mellikov, Enn; Lott, Kalju; Kärner, T.; Heinmaa, I.; Laas, Tõnu; Medvid, A.; Skroupa, W.; Prucnal, S.; Zvyagin, S.; Cizmar, E.; Ozerov, M.; Wosnitsa, J.Solid state phenomena2010 / p. 145-148 : ill https://www.sciencedirect.com/science/article/abs/pii/S0040609009014564

journal article
13

journal article

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the properties of the interfaceKropman, Daniel; Mellikov, Enn; Öpik, Andres; Lott, Kalju; Kärner, T.; Heinmaa, I.; Laas, Tõnu; Medvid, A.; Skroupa, W.; Prucnal, S.; Rebohle, L.; Zvyagin, S.; Cizmar, E.; Ozerov, M.; Wosnitsa, J.Thin solid films2010 / 9, p. 2374-2376 https://www.sciencedirect.com/science/article/abs/pii/S0040609009014564

journal article
14

book article

Interaktsioon punktdefektide ja lisandite vahel süsteemis Si-SiO2 ja nende mõju piirpinna omadustele : [ettekande sisukokkuvõte]Kropman, Daniel; Kärner, T.; Heinmaa, I.Eesti Füüsika Seltsi aastaraamat 20082009 / lk. 119-120

book article
15

journal article

Investigation of strain relaxion mechanism in Si-SiO2 system during the process of its formationKropman, Daniel; Poll, V.; Kärner, T.; Ugaste, Ülo; Mellikov, Enn; Arbu, Uno; Paomets, V.Physica status solidi (a)2003 / 2, p. 297-301 https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.200306611

journal article
16

journal article

Low-K factor of SiO2 layer on Si irradiated by YAG:Nd laserMedvid, A.; Onufrijevs, Pavels; Mellikov, Enn; Kropman, Daniel; Muktepavela, F.; Bakradze, G.Journal of non-crystalline solids2007 / p. 703-707 : ill https://www.sciencedirect.com/science/article/pii/S0022309306014116

journal article
17

book article

Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system propertiesKropman, Daniel; Arbu, Uno; Kärner, T.; Ugaste, Ülo; Mellikov, Enn; Kauk, Marit; Heinmaa, I.; Samoson, Ago; Medvid, A.Gettering and defect engineering in semiconductor technology. XI2005 / p. 333-338 : ill https://www.researchgate.net/publication/243760197_Point_Defects_Interaction_with_Extended_Defects_and_Impurities_and_Its_Influence_on_the_Si-SiO_2_System_Properties

book article
18

book article

Point defects interaction with extended defects in the Si-SiO2 system [Electronic resource]Kropman, Daniel; Kärner, T.; Abru, Uno; Ugaste, Ülo; Mellikov, EnnProceedings IVC-16 : Venice, 20042004 / p. SS1-TuP394 [CD-ROM] https://www.researchgate.net/publication/243760197_Point_Defects_Interaction_with_Extended_Defects_and_Impurities_and_Its_Influence_on_the_Si-SiO_2_System_Properties

book article
19

book article

Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Öpik, Andres; Lott, Kalju; Volobujeva, Olga; Kärner, T.; Heinmaa, I.; Laas, Tõnu; Medvid, A.Radiation Interaction with Materials and its use in Technologies : Kaunas, 24-27.09.20082008 / p. 204-207 https://www.sciencedirect.com/science/article/pii/S0921452609010321

book article
20

journal article

Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Öpik, Andres; Lott, Kalju; Volobujeva, Olga; Kärner, T.; Heinmaa, I.; Laas, Tõnu; Medvid, A.Physica B : condensed matter2009 / 23/24, p. 5153-5155 : ill

journal article
21

journal article

Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, Tiit; Laas, Tõnu; Medvid, Arthur; Onufrijevs, Pavels; Dauksta, EdvinsSolid state phenomena2011 / p. 259-262

journal article
22

journal article EST / journal article ENG

Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Seeman, Viktor; Dolgov, Sergei; Heinmaa, Ivo; Medvid, ArturPhysica Status Solidi (C) Current Topics in Solid State Physics2016 / p. 790 - 792 https://doi.org/10.1002/pssc.201600051 Journal metrics at Scopus Article at Scopus Article at WOS

journal article EST / journal article ENG
23

journal article EST / journal article ENG

Understanding and control of stress at Si-SiO2 interfaceKropman, Daniel; Seeman, Viktor; Medvids, Arturs; Onufrijevs, Pavels; Vitusevich, Svetlana; Mikli, ValdekKey engineering materials2020 / p. 291−296 https://doi.org/10.4028/www.scientific.net/KEM.850.291 Journal metrics at Scopus Article at Scopus

journal article EST / journal article ENG
24

book article

Влияние неоднородностей в моно- и поликристаллическом Cds на фотоэлектрические и длинновременные неравновесные свойстваKropman, Daniel; Lott, Kalju; Šeinkman, M.Физика, химия и технические применения полупроводников A2B6 : тезисы докладов IV всесоюзного совещания (Одесса, 16-19 ноября 1976 г.)1976 / с. 123 https://www.ester.ee/record=b2969209*est

book article
25

journal article

Влияние облучения низкоэнергетическими электронами в растровом электронном микроскопе на параметры полупроводниковых приборовMeiler, Boriss; Kropman, Daniel; Levtšenkova, AllaМикроэлектроника1987 / с. 165-169 : илл https://www.ester.ee/record=b2147720*est

journal article

Number of records 28, displaying 1 - 25

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1. Kropman, Daniel 1931
2. Kropman, Daniel Josif
3. Arensburger, Daniel
4. Daniel, Eghert 1957
5. Daniel, Kamran 1986
6. Daniel, Oskar Evald 1874-1945
7. Good, Daniel
8. Konsap, Daniel 1881-1941
9. Lõhmus, Daniel 1984

1. Daniel, Oskar Evald, 1874-1945
2. Defoe, Daniel
3. Ita, Daniel Raphael
4. Kehlmann, Daniel, 1975-
5. Kotsjuba, Daniel
6. Labrosse, Daniel
7. Raymond, Daniel, 1786-1849

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